型號(hào): | MJE521 |
廠商: | CENTRAL SEMICONDUCTOR CORP |
元件分類: | 功率晶體管 |
英文描述: | 4 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-126 |
文件頁(yè)數(shù): | 1/1頁(yè) |
文件大小: | 35K |
代理商: | MJE521 |
相關(guān)PDF資料 |
PDF描述 |
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MJE802LEADFREE | 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 |
MJE3440LEADFREE | 0.3 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-126 |
MJE171 | 3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126 |
MJE172LEADFREE | 3 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126 |
MJE233LEADFREE | 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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MJE521 | 制造商:STMicroelectronics 功能描述:Bipolar Transistor |
MJE521_03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:SILICON NPN TRANSISTOR |
MJE521G | 功能描述:兩極晶體管 - BJT 4A 40V 40W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
MJE52T | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
MJE53T | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |