- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385578 > MJE4353 (ON SEMICONDUCTOR) High-Voltage High Power Transistor(16A,160V,高壓大功率硅PNP晶體管) PDF資料下載
參數(shù)資料
| 型號(hào)： | MJE4353 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | High-Voltage High Power Transistor(16A,160V,高壓大功率硅PNP晶體管) |
| 中文描述： | 16 A, 160 V, PNP, Si, POWER TRANSISTOR, TO-218 |
| 封裝： | CASE 340D-02, 3 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 91K |
| 代理商： | MJE4353 |
MJE4343 MJE4353
http://onsemi.com
5
100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1
200
50
1.0
Figure 10. Maximum Forward Bias Safe
Operating Area
5.0ms
dc
20
150
30
20
10
7.0
5.0
3.0
I
0.2
0.5
2.0
5.0
10
50
70
100
SECONDARY BREAKDOWN LIMITED
THERMAL LIMIT T
C
= 25
°
C
BONDING WIRE LIMITED
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current conditions during
reverse biased turn–off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 11 gives RBSOA characteristics.
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
– V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 10 is based on T
C
= 25 C; T
J(pk)
is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when T
C
≥
25 C. Second breakdown limitations do
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 10 may be found at
any case temperature by using the appropriate curve on
Figure 9.
20
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
8.0
Figure 11. Maximum Reverse Bias Safe
Operating Area
16
120
100
80
60
40
20
I
4.0
12
140
160
180
T
J
= 100
°
C
V
BE(off)
≤
5 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJE800 | Plastic Darlington Complementary Silicon Power Transistors(互補(bǔ)型達(dá)林頓硅功率晶體管) |
| MJF4343 | POWER TRANSISTORS COMPLEMENTARY SILICON |
| MJF6388 | Complementary Power Darlingtons(互補(bǔ)型功率晶體管) |
| MJL0281A | Complementary NPN(互補(bǔ)型NPN) |
| MJL0302A | Complementary NPN(互補(bǔ)型NPN) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE4353G | 功能描述:兩極晶體管 - BJT 16A 160V 125W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE5030 | 制造商:ON Semiconductor 功能描述: |
| MJE5170 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon PNP Power Transistors |
| MJE5171 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon PNP Power Transistors |
| MJE5172 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon PNP Power Transistors |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。