參數資料
型號： MJE3055TBG
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 10 A, 60 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁數： 58/59頁
文件大小： 357K
代理商： MJE3055TBG
Selector Guide
2–8
Motorola Bipolar Power Transistor Device Data
Table 3. Plastic TO–218 Type (continued)
ICCont
Amps
Max
PD
(Case)
Watts
@ 25
°C
fT
MHz
Min
Resistive Switching
@ IC
Amp
hFE
Min/Max
Device Type
VCEO(sus)
Volts
Min(8)
ICCont
Amps
Max
PD
(Case)
Watts
@ 25
°C
fT
MHz
Min
@ IC
Amp
tf
s
Max
ts
s
Max
@ IC
Amp
hFE
Min/Max
PNP
NPN
VCEO(sus)
Volts
Min(8)
15
60
TIP3055
TIP2955
5 min
10
2.5
80
150
MJH11018 (2)
MJH11017 (2)
400/15k
10
3
150
200
MJH11020 (2)
MJH11019 (2)
400/15k
10
3
150
250
MJH11022 (2)
MJH11021 (2)
400/15k
10
3
150
400
BUV48
8 min
10
2
0.4
10
150
450
BUV48A
8 min
8
2
0.4
10
150
16
140
MJE4342
MJE4352
15 min
8
1.2 typ
8
1
125
160
MJE4343
MJE4353
15 min
8
1.2 typ
8
1
125
20
60
MJH6282(2)
MJH6285(2)
750/18k
10
4
125
100
MJH6284 (2)
MJH6287 (2)
750/18k
10
4
125
25
80
TIP35A
TIP36A
15/75
15
0.6 typ
0.3 typ
10
3
125
100
BD249C
BD250C
10 min
15
3
125
TIP35C
TIP36C
15/75
15
0.6 typ
0.3 typ
10
3
125
(2)Darlington
(8)When 2 voltages are given, the format is VCEO(sus)/VCES.
Table 4. Isolated Mounting Hole — Plastic TO–247 Type
Device Type
Resistive Switching
PD
ICCont
Amps
Max
VCEO(sus)
Volts
Min
VCES
Volts
Min
NPN
PNP
hFE
Min/Max
@ IC
Amp
ts
s
Max
tf
s
Max
@ IC
Amp
fT
MHz
Min
PD
(Case)
Watts
@ 25
°C
10
650
1500
MJW16212
4/10
10
4(3)
0.5(3)
5.5
150
800
1500
MJW16018
4 min
5
4.5 typ
0.2 typ
5
3 typ
150
12
500
1200
MJW16206
5/13
10
2.25
0.25
6.5
3 typ
150
15
450
850
MJW16010
5 min
15
1.2 typ
0.2 typ
10
150
850
MJW16012
7 min
15
0.9 typ
0.15 typ
10
150
500
1000
MJW16010A
5 min
15
3
0.4
10
150
(3)Switching tests performed w/special application simulator circuit. See data sheet for details.
(10)Tested in Applications simulator: see Data Sheet.
Devices listed in bold, italic are Motorola preferred devices.
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
CASE 340F
(TO–247 Type)
1
3
2
相關PDF資料
PDF描述
MJE3055TAS 10 A, 60 V, NPN, Si, POWER TRANSISTOR
MJE3055TAK 10 A, 60 V, NPN, Si, POWER TRANSISTOR
MJE3055TAJ 10 A, 60 V, NPN, Si, POWER TRANSISTOR
MJE3055TAN 10 A, 60 V, NPN, Si, POWER TRANSISTOR
MJE2955TAJ 10 A, 60 V, PNP, Si, POWER TRANSISTOR
相關代理商/技術參數
參數描述
MJE3055TG 功能描述:兩極晶體管 - BJT 10A 60V 125W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE3055TG-TA3-T 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR
MJE3055TG-TM3-T 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR
MJE3055TG-TN3-R 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR
MJE3055TL-TA3-T 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR
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