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參數(shù)資料
| 型號： | MJE2955TBV |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 8/59頁 |
| 文件大?。?/td> | 357K |
| 代理商： | MJE2955TBV |
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Selector Guide
2–16
Motorola Bipolar Power Transistor Device Data
Audio
GENERAL DESIGN CURVES FOR POWER AUDIO OUTPUT STAGES
500
300
100
70
50
30
10
30
50
100
300
500
1000
16 OHMS
8 OHMS
4 OHMS
OUTPUT POWER (WATTS)
V
(BR)
CEO
(VOL
TS)
V(BR)CEO Required on Output and Driver Transistor
versus
Output Power for 4, 8 and 18 Ohm Loads
8 OHMS
4 OHMS
50
30
10
5.0
3.0
1.0
10
30
50
100
300
500
1000
OUTPUT POWER (WATTS)
PEAK
OUTPUT
CURRENT
(AMPS)
Output Transistor Peak Collector Current
versus
Output Power for 4, 8 and 16 Ohm Loads
16 OHMS
Another important parameter that must be considered before selecting the output transistors is the safe–operating area these
devices must withstand. For a complete discussion see Application Note AN485.
Table 9. Recommended Power Transistors for Audio/Servo Loads
RMS
Power
Output
NPN
PNP
Case
PD
Watts
@ 25
°C
VCEO
hFE @
Min/Max
IC
Amps
fT
MHz
Typ
ISB
Volts/Amps
To 25W
MJE15030
MJE15031
TO–220
50
150
20 min
4
30
14/3.6
MJE15032
MJE15033
TO–220
50
250
50 min
1
40
50/1
25 to 50W
2N3055A
MJ2955A
TO–204
120
20/70
4
3
60/2
MJ15001
MJ15002
TO–204
200
140
25/150
4
3
40/5
50 to 100W
MJ15015
MJ15016
TO–204
180
120
20/70
4
3
60/3
MJ15003
MJ15004
TO–204
250
140
25/150
5
3
100/1
MJ15020
MJ15021
TO–204
150
250
30 min
1
20
50/3
Over 100W
MJ15024
MJ15025
TO–204
250
15/60
8
80/2.2
MJ3281A
MJ1302A
TO–204
250
200
60/175
7
30
50/4
MJL3281A
MJL1302A
340G–01
150
200
60/175
7
30
40/4
MJ21194
MJ21193
TO–204
250
25/75
8
7
100/2
MJL21194
MJL21193
340G–01
200
25/75
8
7
100/2
The Power Transistors shown are provided for reference only and show device capability. The final choice of the Power Transis-
tors used is left to the circuit designer and depends upon the particular safe–operating area required and the mounting and heat
sinking configuration used.
相關(guān)PDF資料 |
PDF描述 |
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| MJE3055TBC | 10 A, 60 V, NPN, Si, POWER TRANSISTOR |
| MJE2955TAU | 10 A, 60 V, PNP, Si, POWER TRANSISTOR |
| MJE2955TAS | 10 A, 60 V, PNP, Si, POWER TRANSISTOR |
| MJE2955TBG | 10 A, 60 V, PNP, Si, POWER TRANSISTOR |
| MJE2955TDW | 10 A, 60 V, PNP, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE2955TD127 | 制造商:Motorola Inc 功能描述: |
| MJE2955TG | 功能描述:兩極晶體管 - BJT 10A 60V 125W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE2955TG-TN3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR |
| MJE2955TTU | 功能描述:兩極晶體管 - BJT PNP Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE2955TTU_Q | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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