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參數(shù)資料
| 型號： | MJE253LEADFREE |
| 廠商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 35K |
| 代理商： | MJE253LEADFREE |
www.centr alsemi.com
Power Transistors
TO-126 Case (Continued)
Shaded areas indicate Darlington.
TYPE NO.
IC
PD
BVCBO
BVCEO
hFE
@ IC VCE(SAT) @ IC
fT
(A)
(W)
(V)
(mA)
(V)
(A)
(MHz)
NPN
PNP
MAX
MIN
MAX
MIN
MJE180
MJE170
3.0
15
60
40
50
250
100
0.3
0.5
50
MJE181
MJE171
3.0
15
80
60
50
250
100
0.3
0.5
50
MJE182
MJE172
3.0
15
100
80
50
250
100
0.3
0.5
50
MJE200
MJE210
5.0
15
40
25
45
180
2,000
0.3
0.5
65
MJE220
MJE230
4.0
15
60
40
200
0.3
0.5
50
MJE221
MJE231
4.0
15
60
40
150
200
0.3
0.5
50
MJE222
MJE232
4.0
15
60
40
25
- -
200
0.3
0.5
50
MJE223
MJE233
4.0
15
80
60
40
200
0.3
0.5
50
MJE224
MJE234
4.0
15
80
60
40
150
200
0.3
0.5
50
MJE225
MJE235
4.0
15
80
60
25
- -
200
0.3
0.5
50
MJE240
MJE250
4.0
15
80
40
200
0.3
0.5
40
MJE241
MJE251
4.0
15
80
40
120
200
0.3
0.5
40
MJE242
MJE252
4.0
15
80
25
- -
200
0.3
0.5
40
MJE243
MJE253
4.0
15
100
40
120
200
0.3
0.5
40
MJE244
MJE254
4.0
15
100
25
- -
200
0.3
0.5
40
MJE340
MJE350
0.5
20
300
30
240
50
- -
MJE341
0.5
20
175
150
25
200
50
2.3
0.15
15
MJE344
0.5
20
200
30
300
50
1.0
0.05
15
MJE520
MJE370
3.0
25
30
25
- -
1,000
- -
MJE521
MJE371
4.0
40
- -
1,000
- -
MJE720
MJE710
1.5
20
40
- -
150
1.0
1.5
- -
MJE721
MJE711
1.5
20
60
40
- -
150
1.0
1.5
- -
MJE722
MJE712
1.5
20
80
40
- -
150
1.0
1.5
- -
MJE800
MJE700
4.0
40
60
750
- -
1,500
2.5
1.5
1.0
MJE801
MJE701
4.0
40
60
750
- -
2,000
2.8
2.0
1.0
MJE802
MJE702
4.0
40
80
750
- -
1,500
2.5
1.5
1.0
MJE803
MJE703
4.0
40
80
750
- -
2,000
2.8
2.0
1.0
MJE3439
0.3
15
450
350
50
200
20
0.5
0.1
15
MJE3440
0.3
15
350
250
50
200
20
0.5
0.1
15
Top View
Bottom View
(6-December 2004)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJE803 | 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| MJE344LEADFREE | 0.5 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| MJE720LEADFREE | 1.5 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| MJE182 | 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| MJE220LEADFREE | 4 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-126 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE254 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJE270 | 功能描述:兩極晶體管 - BJT 2A 100V Bipolar RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE270G | 功能描述:兩極晶體管 - BJT 2A 100V Bipolar Power NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE271 | 功能描述:兩極晶體管 - BJT 2A 100V Bipolar RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE271G | 功能描述:兩極晶體管 - BJT 2A 100V Bipolar Power PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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