參數(shù)資料
型號： MJE253
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： Complementary Silicon Power Plastic Transistors(互補(bǔ)型硅功率晶體管)
中文描述： 4 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-225AA
封裝： PLASTIC, CASE 77-09, TO-225, 3 PIN
文件頁數(shù)： 4/6頁
文件大?。?/td> 89K
代理商： MJE253
MJE243 NPN, MJE253 PNP
http://onsemi.com
4
10
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
0.1
30
0.01
0.05
Figure 5. Active Region Safe Operating Area
500 s
dc
5.0
20
10
7.0
5.0
3.0
2.0
1.0
100 s
T
J
= 150
°
C
BONDING WIRE LIMITED
THERMALLY LIMITED @
T
C
= 25
°
C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED V
CEO
I
0.2
0.5
1.0
2.0
0.02
1.0ms
100
70
50
5.0ms
MJE243/MJE253
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150 C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
150 C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
10K
I
C
, COLLECTOR CURRENT (AMPS)
10
5K
3K
2K
1K
500
300
200
100
50
30
20
Figure 6. TurnOff Time
t
0.01
0.03 0.05
0.5
0.2
0.02
0.1
0.3
10
5
2
1
3
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25
°
C
t
s
t
f
V
R
, REVERSE VOLTAGE (VOLTS)
10
100
100
200
50
Figure 7. Capacitance
70
50
20
10
7.0
5.0
3.0
1.0
C
2.0
T
J
= 25
°
C
C
ib
C
ob
MJE243 (NPN)
MJE253 (PNP)
30
NPN MJE243
PNP MJE253
20
70
30
相關(guān)PDF資料
PDF描述
MJE350 Plastic Medium Power PNP Silicon Transistor(0.5A,300V,20W,塑料中等功率硅PNP晶體管)
MJE4353 High-Voltage High Power Transistor(16A,160V,高壓大功率硅PNP晶體管)
MJE800 Plastic Darlington Complementary Silicon Power Transistors(互補(bǔ)型達(dá)林頓硅功率晶體管)
MJF4343 POWER TRANSISTORS COMPLEMENTARY SILICON
MJF6388 Complementary Power Darlingtons(互補(bǔ)型功率晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE253G 功能描述:兩極晶體管 - BJT 4A 100V 15W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE253G 制造商:ON Semiconductor 功能描述:Bipolar Transistor
MJE254 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS
MJE270 功能描述:兩極晶體管 - BJT 2A 100V Bipolar RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE270G 功能描述:兩極晶體管 - BJT 2A 100V Bipolar Power NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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