參數(shù)資料
型號(hào)： MJE2361TAN
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁(yè)數(shù)： 16/59頁(yè)
文件大小： 340K
代理商： MJE2361TAN
5–3
Outline Dimensions and Leadform Options
Motorola Bipolar Power Transistor Device Data
Outline Dimensions (continued)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
1.530 REF
38.86 REF
B
0.990
1.050
25.15
26.67
C
0.250
0.335
6.35
8.51
D
0.057
0.063
1.45
1.60
E
0.060
0.070
1.53
1.77
G
0.430 BSC
10.92 BSC
H
0.215 BSC
5.46 BSC
K
0.440
0.480
11.18
12.19
L
0.665 BSC
16.89 BSC
N
0.760
0.830
19.31
21.08
Q
0.151
0.165
3.84
4.19
U
1.187 BSC
30.15 BSC
V
0.131
0.188
3.33
4.77
CASE 197A–05
A
N
E
C
K
–T– SEATING
PLANE
2 PL
D
M
Q
M
0.30 (0.012)
Y M
T
M
Y
M
0.25 (0.010)
T
–Q–
–Y–
2
1
L
G
B
V
H
U
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.570
0.620
14.48
15.75
B
0.380
0.405
9.66
10.28
C
0.160
0.190
4.07
4.82
D
0.025
0.035
0.64
0.88
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.42
2.66
H
0.110
0.155
2.80
3.93
J
0.018
0.025
0.46
0.64
K
0.500
0.562
12.70
14.27
L
0.045
0.060
1.15
1.52
N
0.190
0.210
4.83
5.33
Q
0.100
0.120
2.54
3.04
R
0.080
0.110
2.04
2.79
S
0.045
0.055
1.15
1.39
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
–––
1.15
–––
Z
–––
0.080
–––
2.04
B
Q
H
Z
L
V
G
N
A
K
F
12 3
4
D
SEATING
PLANE
–T–
C
S
T
U
R
J
CASE 221A–06
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 197–05
A
N
E
C
K
D 2 PL
SEATING
PLANE
–T–
U
L
M
Q
M
0.25 (0.010)
Y M
T
–Y–
H
G
B
–Q–
2
1
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
1.510
1.550
38.35
39.37
B
0.980
1.050
24.89
26.67
C
0.250
0.335
6.35
8.51
D
0.057
0.063
1.45
1.60
E
0.060
0.135
1.52
3.43
G
0.420
0.440
10.67
11.18
H
0.205
0.225
5.21
5.72
K
0.440
0.480
11.18
12.19
L
0.655
0.675
16.64
17.15
N
0.760
0.830
19.30
21.08
Q
0.151
0.175
3.84
4.19
U
1.177
1.197
29.90
30.40
(TO220–AB)
(TO–204AA)
(TO–204AE)
相關(guān)PDF資料
PDF描述
MJE2360TAJ 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR
MJE2360TAU 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR
MJE2360TBD 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR
MJE2361TAU 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR
MJE2955TBU 10 A, 60 V, PNP, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE240 制造商:Motorola Inc 功能描述:
MJE241 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS
MJE242 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS
MJE243 功能描述:兩極晶體管 - BJT 4A 100V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE243_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Silicon Power Plastic Transistors 100 VOLTS, 15 WATTS
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*