參數(shù)資料
型號: MJE2360TBD
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, TO-220AB, 3 PIN
文件頁數(shù): 12/59頁
文件大?。?/td> 340K
代理商: MJE2360TBD
MJE2360T MJE2361T
3–627
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage(1)
(IC = 2.5 mAdc, IB = 0)
VCEO(sus)
350
Vdc
Collector Cutoff Current
(VCE = 250 Vdc, IB = 0)
ICEO
0.25
mAdc
Collector Cutoff Current
(VCE = 375 Vdc, VEB(off) = 1.5 Vdc)
ICEX
0.5
mAdc
Collector Cutoff Current
(VCB = 375 Vdc, IE = 0)
ICBO
0.1
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
0.1
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 50 mAdc, VCE = 10 Vdc)
MJE2360T
MJE2361T
(IC = 100 mAdc, VCE = 10 Vdc)
MJE2360T
MJE2361T
hFE
25
50
15
40
200
250
Collector–Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
1.5
Vdc
Base–Emitter On Voltage
(IC = 100 mAdc, VCE = 10 Vdc)
VBE(on)
1.0
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 50 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
fT
10
MHz
Output Capacitance
(VCB = 100 Vdc, IE = 0, f = 100 kHz)
Cob
20
pF
(1) Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2.0%.
1.0
Figure 2. DC Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.5
0.3
0.2
0.05
0.01
5.0
10
SECONDARY BREAKDOWN LIMITED
BONDING WIRE LIMITED
I C
,C
OLLE
CT
OR
C
URREN
T
(AMP
)
0.02
0.03
2.0
20
50
1000
0.1
100
200
500
TJ = 150°C
The Safe Operating Area Curves indicate IC – VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the ap-
plicable Safe Area to avoid causing a catastrophic failure. To
insure operation below the maximum TJ, power–temperature
derating must be observed for both steady state and pulse
power conditions.
相關(guān)PDF資料
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