型號(hào): | MJE2360TBC |
廠商: | ON SEMICONDUCTOR |
元件分類: | 功率晶體管 |
英文描述: | 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR |
封裝: | PLASTIC, TO-220AB, 3 PIN |
文件頁數(shù): | 55/59頁 |
文件大?。?/td> | 340K |
代理商: | MJE2360TBC |
相關(guān)PDF資料 |
PDF描述 |
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MJE2360TBU | 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR |
MJE2360TBV | 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR |
MJE2360T | 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
MJE2361TBG | 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR |
MJE2360TBG | 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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MJE2361T | 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:POWER TRANSISTORS(0.5A,350V,30W) |
MJE240 | 制造商:Motorola Inc 功能描述: |
MJE241 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS |
MJE242 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS |
MJE243 | 功能描述:兩極晶體管 - BJT 4A 100V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |