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參數(shù)資料
| 型號： | MJE18009AN |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 1/66頁 |
| 文件大小： | 512K |
| 代理商： | MJE18009AN |
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3–750
Motorola Bipolar Power Transistor Device Data
Designer's Data Sheet
SWITCHMODE NPN Silicon
Planar Power Transistor
The MJE/MJF18009 has an application specific state–of–the–art die designed for
use in 220 V line–operated Switchmode Power supplies and electronic ballast (“l(fā)ight
ballast”). These high voltage/high speed transistors exhibit the following main
features:
Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain hFE
— Fast Switching
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)
Full Characterization at 125_C
Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric
Distributions
Specified Dynamic Saturation Data
Two Package Choices: Standard TO–220 or Isolated TO–220
MAXIMUM RATINGS
Rating
Symbol
MJE18009
MJF18009
Unit
Collector–Emitter Sustaining Voltage
VCEO
450
Vdc
Collector–Emitter Breakdown Voltage
VCES
1000
Vdc
Collector–Base Breakdown Voltage
VCBO
1000
Vdc
Emitter–Base Voltage
VEBO
9
Vdc
Collector Current — Continuous
— Peak (1)
IC
ICM
10
20
Adc
Base Current — Continuous
— Peak (1)
IB
IBM
4
8
Adc
*Total Device Dissipation @ TC = 25°C
*Derate above 25
_C
PD
150
1.2
50
0.4
Watt
W/
_C
Operating and Storage Temperature
TJ, Tstg
– 65 to 150
_C
RMS Isolation Voltage (2)
Per Figure 22
(1s, 25
°C, Humidity ≤ 30%)
Per Figure 23
TC = 25°C
Per Figure 24
VISOL1
VISOL2
VISOL3
4500
3500
1500
V
THERMAL CHARACTERISTICS
Rating
Symbol
MJE18009
MJF18009
Unit
Thermal Resistance — Junction to Case
— Junction to Ambient
R
θJC
R
θJA
0.83
62.5
2.5
62.5
_C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8
″ from Case for 5 Seconds
TL
260
_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
v 10%.
(2) Proper strike and creepage distance must be provided.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJE18009
MJF18009
POWER TRANSISTORS
10 AMPERES
1000 VOLTS
50 and 150 WATTS
CASE 221A–06
TO–220AB
CASE 221D–02
TO–220 FULLPACK
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJE18009AK | 10 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18009AJ | 10 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18009AF | 10 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18009AS | 10 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18009BA | 10 A, 450 V, NPN, Si, POWER TRANSISTOR |
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