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| 型號(hào)： | MJE18008BV |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 45/65頁 |
| 文件大?。?/td> | 503K |
| 代理商： | MJE18008BV |
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MJE18008 MJF18008
3–746
Motorola Bipolar Power Transistor Device Data
I C
,COLLECT
OR
CURRENT
(AMPS)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
hFE, FORCED GAIN
T
C
,CROSSOVER
TIME
(ns)
3
160
hFE, FORCED GAIN
Figure 13. Inductive Fall Time
t fi
,F
ALL
TIME
(ns)
Figure 14. Inductive Crossover Time
I C
,COLLECT
OR
CURRENT
(AMPS)
Figure 15. Forward Bias Safe Operating Area
Figure 16. Reverse Bias Switching Safe
Operating Area
Figure 17. Forward Bias Power Derating
60
515
400
200
50
100
10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
9
6
0
200
1,0
0,8
0,2
0,0
20
TC, CASE TEMPERATURE (°C)
80
140
160
1
0.01
3
600
1000
4
100
1000
DC (MJE18008)
5 ms
POWER
DERA
TING
FACT
OR
0,6
0,4
6789
10
11
12
13
14
70
80
140
35
15
4
6789
10
11
12
13
14
300
100
IC = 2 A
IC = 4.5 A
TJ = 25°C
TJ = 125°C
10
0.1
EXTENDED
SOA
1 ms
10
s 1 s
400
2
1
4
5
40
60
100
120
SECOND BREAKDOWN
DERATING
DC (MJF18008)
100
120
350
7
8
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC –VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation
than the curves indicate. The data of Figure 15 is based on TC
= 25
°C; TJ(pk) is variable depending on power level. Second
breakdown pulse limits are valid for duty cycles to 10% but
must be derated when TC > 25°C. Second breakdown
limitations do not derate the same as thermal limitations.
Allowable current at the voltages shown in Figure 15 may be
found at any case temperature by using the appropriate curve
on Figure 17. TJ(pk) may be calculated from the data in Figure
20 and 21. At any case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown. For inductive
loads, high voltage and current must be sustained simulta-
neously during turn–off with the base–to–emitter junction
reverse–biased. The safe level is specified as a reverse–
biased safe operating area (Figure 16). This rating is verified
under clamped conditions so that the device is never
subjected to an avalanche mode.
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 H
150
130
110
90
150
250
800
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 H
IC = 2 A
IC = 4.5 A
–1, 5 V
–5 V
TC ≤ 125°C
IC/IB ≥ 4
LC = 500 H
GUARANTEED SAFE OPERATING AREA INFORMATION
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
TJ = 25°C
TJ = 125°C
THERMAL DERATING
VBE(off) = 0 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| MJE18008G | 功能描述:兩極晶體管 - BJT 8A 450V 125W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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| MJE180G | 功能描述:兩極晶體管 - BJT 3A 40V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE180PWD | 功能描述:TRANSISTOR NPN 40V 3A RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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