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參數(shù)資料
| 型號(hào)： | MJE15033 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS 50 WATTS |
| 中文描述： | 8 A, 250 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 141K |
| 代理商： | MJE15033 |
3
Motorola Bipolar Power Transistor Device Data
250 ms
100
μ
s
50 ms
10 ms
100
1.0
Figure 3. MJE15032 & MJE15033
Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
0.01
I
10
1000
1.0
100
0.1
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion then the curves indicate.
The data of Figures 3 and 4 is based on TJ(pk) = 150 C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150 C. TJ(pk) may be calculated from the data in Figure 2.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
25
°
C
150
°
C
–55
°
C
1000
0.1
Figure 4. NPN — MJE15032
VCE = 5 V DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
1.0
h
10
100
10
1.0
Figure 5. PNP — MJE15033
VCE = 5 V DC Current Gain
Figure 6. NPN — MJE15032
VCE = 5 V VBE(on) Curve
IC, COLLECTOR CURRENT (AMPS)
1.0
10
1.0
10
V
0.1
0.1
Figure 7. PNP — MJE15033
VCE = 5 V VBE(on) Curve
IC, COLLECTOR CURRENT (AMPS)
10
V
1.0
10
0.1
0.1
1.0
NPN — MJE15032
PNP — MJE15033
25
°
C
150
°
C
–55
°
C
25
°
C
150
°
C
–55
°
C
1000
0.1
IC, COLLECTOR CURRENT (AMPS)
1.0
h
10
100
10
1.0
25
°
C
150
°
C
–55
°
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE15033G | 功能描述:兩極晶體管 - BJT 8A 250V 50W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE15033G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR, |
| MJE15034 | 功能描述:兩極晶體管 - BJT 4A 350V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE15034_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 350 VOLTS, 50 WATTS |
| MJE15034G | 功能描述:兩極晶體管 - BJT 4A 350V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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