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參數(shù)資料
| 型號： | MJE15028BV |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8 A, 120 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 23/61頁 |
| 文件大?。?/td> | 408K |
| 代理商： | MJE15028BV |
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MJE15028 MJE15030 MJE15029 MJE15031
3–686
Motorola Bipolar Power Transistor Device Data
20
2.0
Figure 3. Forward Bias Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
16
10
0.02
20
120
BONDING WIRE LIMITED
THERMALLY LIMITED
SECOND BREAKDOWN
LIMITED @ TC = 25°C
I C
,COLLECT
OR
CURRENT
(AMP)
dc
100
s
5.0
10
150
1.0
50
0.1
5ms
MJE15028
MJE15029
MJE15030
MJE15031
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion then the curves indicate.
The data of Figures 3 and 4 is based on TJ(pk) = 150_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150
_C. TJ(pk) may be calculated from the data in Figure 2.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
8.0
0
Figure 4. Reverse–Bias Switching
Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5.0
0
120
140
I C
,COLLECT
OR
CURRENT
(AMP)
5 V
VBE(off) = 9 V
100
110
150
3.0
130
2.0
1.0
VR, REVERSE VOLTAGE (VOLTS)
10
150
500
1000
50
Figure 5. Capacitances
200
100
30
10
7.0
5.0
1.5
C,
CAP
ACIT
ANCE
(pF)
3.0
20
50
Figure 6. Small–Signal Current Gain
f, FREQUENCY (MHz)
1.0
3.0
10
20
100
h
fe
,SMALL
SIGNAL
CURRENT
GAIN
2.0
7.0
5.0
0.5
5.0
50
30
10
0.7
NPN
Figure 7. Current Gain–Bandwidth Product
IC, COLLECTOR CURRENT (AMP)
0.5
2.0
60
100
f T
,CURRENT
GAIN–BANDWIDTH
PRODUCT
(MHz)
1.0
10
20
0.1
5.0
90
50
0.2
IC/IB = 10
TC = 25°C
3 V
1.5 V
PNP
(NPN)
(PNP)
VCE = 10 V
IC = 0.5 A
TC = 25°C
Cib (NPN)
Cob (PNP)
100
30
0
10
0 V
Cib (PNP)
Cob (NPN)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJE15028AJ | 8 A, 120 V, NPN, Si, POWER TRANSISTOR |
| MJE15031BD | 8 A, 150 V, PNP, Si, POWER TRANSISTOR |
| MJE15028AK | 8 A, 120 V, NPN, Si, POWER TRANSISTOR |
| MJE15028BG | 8 A, 120 V, NPN, Si, POWER TRANSISTOR |
| MJE15030AS | 8 A, 150 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE15028G | 功能描述:兩極晶體管 - BJT 8A 120V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE15029 | 功能描述:兩極晶體管 - BJT 8A 120V 50W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE15029 | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR PNP -120V TO-220 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR, PNP, -120V, TO-220 |
| MJE15029G | 功能描述:兩極晶體管 - BJT 8A 120V 50W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE15030 | 功能描述:兩極晶體管 - BJT 8A 150V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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