參數(shù)資料
型號(hào)： MJE13003D
廠商： DC Components Co., Ltd.
英文描述： TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
中文描述： 技術(shù)規(guī)格晶體管瑞展
文件頁數(shù)： 1/1頁
文件大?。?/td> 81K
代理商： MJE13003D
MJE13003D
DISCRETE SEMICONDUCTORS
R
DC COMPONENTS CO., LTD.
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Pinning
1 = Base
2 = Collector
3 = Emitter
Description
Designed for high-voltage, high-speed power switching
inductive circuits where fall time is critical.
Characteristic
Symbol
V
CEV
V
CEO
V
EBO
I
C
I
B
P
D
T
J
T
STG
Rating
700
400
9
1.5
0.75
40
+150
-55 to +150
Unit
V
V
V
A
A
W
o
C
o
C
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation(T
C
=25
o
C)
Junction Temperature
Storage Temperature
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Symbol
BV
CEV
BV
CEO
I
CEV
I
EBO
V
CE(sat)1
V
CE(sat)2
V
CE(sat)3
V
BE(sat)1
V
BE(sat)2
h
FE1
h
FE2
Min
700
400
-
-
-
-
-
-
-
8
5
Typ
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
1
1
0.5
1
3
1
1.2
40
25
Unit
V
V
mA
mA
V
V
V
V
V
-
-
Test Conditions
Collector-Emitter Breakdown Voltage
I
C
=1mA, V
BE(off)
=1.5V
I
C
=10mA
V
CE
=700V, V
BE(off)
=1.5V
V
EB
=9V
I
C
=0.5A, I
B
=0.1A
I
C
=1A, I
B
=0.25A
I
C
=1.5A, I
B
=0.5A
I
C
=0.5A, I
B
=0.1A
I
C
=1A, I
B
=0.25A
I
C
=0.5A, V
CE
=2V
I
C
=1A, V
CE
=2V
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
(
1)
Base-Emitter Saturation Voltage
(
1)
DC Current Gain
(1)
Electrical Characteristics
(Ratings at 25
o
C ambient temperature unless otherwise specified)
(1)Pulse Test: Pulse Width
380
μ
s, Duty Cycle
2%
TO-126ML
Dimensions in inches and (millimeters)
.090
(2.28)
.123(3.12)
.113(2.87)
.084(2.14)
.074(1.88)
.033(0.84)
.027(0.68)
.163(4.12)
.153(3.87)
.044(1.12)
.034(0.87)
.060(1.52)
.050(1.27)
.084(2.12)
.074(1.87)
.591(15.0)
.551(14.0)
.300(7.62)
.290(7.37)
.148(3.75)
.138(3.50)
.056(1.42)
.046(1.17)
(.180
.146(3.70)
.136(3.44)
.027(0.69)
.017(0.43)
Typ
1
2
3
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