參數(shù)資料
型號(hào): MJE13003
廠商: CENTRAL SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: 1.5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-126
封裝: TO-126, 3 PIN
文件頁數(shù): 1/2頁
文件大?。?/td> 0K
代理商: MJE13003
(Continued)
R0
MJE13003
NPN SILICON
POWER TRANSISTOR
TO-126 CASE
DATA SHEET
DESCRIPTION
The CENTRAL SEMICONDUCTOR MJE13003 is a Silicon NPN Power Transistor, designed for high speed power
switching applications.
MAXIMUM RATINGS (TC=25°C unless otherwise noted)
SYMBOL
UNITS
Collector-Emitter Voltage
VCEO
400
V
Collector-Emitter Voltage
VCEV
700
V
Emitter-Base Voltage
VEBO
9.0
V
Collector Current
IC
1.5
A
Peak Collector Current
ICM
3.0
A
Base Current
IB
0.75
A
Peak Base Current
IBM
1.5
A
Emitter Current
IE
2.25
A
Peak Emitter Current
IEM
4.5
A
Power Dissipation (TA=25°C)
PD
1.4
W
Power Dissipation
PD
40
W
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
°C
Thermal Resistance
ΘJA
89.0
°C/W
Thermal Resistance
ΘJC
3.12
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICEV
VCE=700V, VBE(OFF)=1.5V
1.0
mA
ICEV
VCE=700V, VBE(OFF)=1.5V, TC=100°C
5.0
mA
IEBO
VEB=9.0V
1.0
mA
BVCEO
IC=10mA
400
V
VCE(SAT)
IC=0.5A, IB=0.1A
0.5
V
VCE(SAT)
IC=1.0A, IB=0.25A
1.0
V
VCE(SAT)
IC=1.5A, IB=0.5A
3.0
V
VBE(SAT)
IC=0.5A, IB=0.1A
1.0
V
VBE(SAT)
IC=1.0A, IB=0.25A
1.2
V
hFE
VCE=2.0V, IC=0.5A
8.0
40
hFE
VCE=2.0V, IC=1.0A
5.0
25
相關(guān)PDF資料
PDF描述
MJE13003 1.5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE13004 4 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-220
MJE13005-BP 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE13007-BP 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE13007R 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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MJE13003_09 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR
MJE13003_12 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN SILICON POWER TRANSISTOR
MJE13003A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MJE SERIES TRANSISTORS
MJE13003B 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:High Voltage Fast-switching NPN Power Transistor