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參數(shù)資料
| 型號(hào)： | MJE13002A |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1.5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | TO-126, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 0K |
| 代理商： | MJE13002A |
UTC MJE13002 NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD
1
QW-R204-014,B
NPN SILICON POWER TRANSISTOR
The UTC MJE13002 designed for use in high–volatge,high
speed,power switching in inductive circuit, It is particularly suited
for 115 and 220V switchmode applications such as switching
regulator’s,inverters,DC-DC converter,Motor control,
Solenoid/Relay drivers and deflection circuits.
FEATURES
*Collector-Emitter Sustaining Voltage:
VCEO (sus)=300V.
*Collector-Emitter Saturation Voltage:
VCE(sat)=1.0V(Max.) @Ic=1.0A, IB =0.25A
*Switch Time- tf =0.7μs(Max.) @Ic=1.0A.
TO-126
1
1: BASE 2:COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCEO (sus)
300
V
Collector-Emitter Voltage
VCEV
600
V
Emitter Base Voltage
VEBO
9
V
Collector Current- Continuous
- Peak (1)
Ic
ICM
1.5
3
A
Base Current – Continuous
- Peak (1)
IB
IBM
0.75
1.5
A
Emitter Current – Continuous
- Peak (1)
IE
IEM
2.25
4.5
A
Total Power Dissipation @ TA=25℃
Derate above 25℃
PD
1.4
11.2
Watts
MW/℃
Total Power Dissipation @ TC=25℃
Derate above 25℃
PD
40
320
Watts
MW/℃
Operating and Storage Junction
Temperature Range
Tj , Tstg
-65 to +150
℃
THERMAL CHARACTERISTICS
CHARACTERISTIC
SYMBOL
MAX
UNIT
Thermal Resistance, Junction to Case
RθJC
3.12
℃
/W
Thermal Resistance, Junction to Ambient
RθJA
89
℃
/W
Maximum Load Temperature for Soldering Purposes:
1/8” from Case for 5 Seconds
TL
275
℃
(1) Pulse Test : Pulse Width=5ms,Duty Cycle≤10%
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| MJE13002C | 1.5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| MJE13002E | 1.5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| MJE13002P | 1 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| MJE13002 | 1 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| MJE13003HV | 1.5 A, 530 V, NPN, Si, POWER TRANSISTOR, TO-126 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE13002B | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:NPN Silicon Plastic-Encapsulate Transistor |
| MJE13003 | 功能描述:兩極晶體管 - BJT BIP NPN 2A 400V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE13003_06 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TO-126 PACKAGE |
| MJE13003_09 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR |
| MJE13003_12 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN SILICON POWER TRANSISTOR |
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