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參數(shù)資料
| 型號： | MJD6039T4 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS |
| 中文描述： | 4 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 270K |
| 代理商： | MJD6039T4 |
5
Motorola Bipolar Power Transistor Device Data
10–1
0
–0.4
+0.2 +0.4
+0.6
–0.6
–0.2
VBE, BASE–EMITTER VOLTAGE (VOLTS)
+0.8
+1
+1.2 +1.4
PNP MJD6036
NPN MJD6039
0.04
IC, COLLECTOR CURRENT (AMP)
0.06
0.2
0
*APPLIES FOR IC/IB < hFE/3
0.1
0.6
0.4
1
– 4.8
2
3
4
104
VBE, BASE–EMITTER VOLTAGE (VOLTS)
10–1
0
+0.4
,
I
μ
103
102
101
100
–0.2
–0.4
–0.6
TJ = 150
°
C
100
°
C
REVERSE
FORWARD
25
°
C
VCE = 30 V
105
+0.6
+0.2
–0.8
–1
–1.2 –1.4
104
,
I
μ
103
102
101
100
REVERSE
FORWARD
105
+0.8
– 4
– 3.2
– 2.4
– 1.6
– 0.8
θ
VB for VBE
25
°
C to 150
°
C
*
θ
VC for VCE(sat)
0.04
IC, COLLECTOR CURRENT (AMP)
0.06
0.2
0
0.1
0.6
0.4
1
– 4.8
2
3
4
+ 0.8
– 4
– 3.2
– 2.4
– 1.6
– 0.8
Figure 10. Temperature Coefficients
Figure 11. Collector Cut–Off Region
Figure 12. Darlington Schematic
BASE
EMITTER
COLLECTOR
≈
8 k
≈
60
PNP
MJD6036
BASE
EMITTER
COLLECTOR
≈
8 k
≈
60
NPN
MJD3039
θ
°
θ
°
– 55
°
C to 25
°
C
25
°
C to 150
°
C
25
°
C to 150
°
C
*APPLIED FOR IC/IB < hFE/3
25
°
C to 150
°
C
– 55
°
C to 25
°
C
25
°
C to 150
°
C
25
°
C to 150
°
C
θ
VC for VBE
θ
VC for VCE(sat)
VCE = 30 V
TJ = 150
°
C
100
°
C
25
°
C
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MJD6039T4G | 功能描述:達林頓晶體管 2A 80V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD61865501 | 制造商:LG Corporation 功能描述:Strap,Head |
| MJD74C | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS20 WATTS |
| MJD86 | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN SILICON PLANAR TRANSISTOR |
| MJD86R | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN SILICON PLANAR TRANSISTOR |
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