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參數(shù)資料
| 型號： | MJD50 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Voltage Power Transistors(高電壓功率晶體管) |
| 中文描述： | 1 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 369C, DPAK-3 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 70K |
| 代理商： | MJD50 |
MJD47, MJD50
http://onsemi.com
3
0.02
I
C
, COLLECTOR CURRENT (AMPS)
1
0.8
V
1.4
1.2
0.4
0
0.6
0.2
V
BE(sat)
@ I
C
/I
B
= 5 V
V
BE(on)
@ V
CE
= 4 V
V
CE(sat)
@ I
C
/I
B
= 5 V
0.02
I
C
, COLLECTOR CURRENT (AMPS)
2
0.06
0.2
2
40
10
100
h
V
CE
= 10 V
T
J
= 150
°
C
60
0.1
0.6
25
°
C
55
°
C
20
0.04
0.4
1
200
4
6
Figure 3. DC Current Gain
t, TIME (ms)
1
0.01
1 k
0.3
0.2
0.07
0.05
r
R
JC(t)
= r(t) R
JC
R
JC
= 8.33
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
T
C
= P
(pk)
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.01
R
Figure 4. “On” Voltages
0.7
0.5
Figure 5. Thermal Response
0.1
0.03
0.02
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1
2
3
5
10
20
30
50
100
200 300
500
0.06
0.2
2
0.1
0.6
0.04
0.4
1
0.2
SINGLE PULSE
D = 0.5
0.05
T
J
= 25
°
C
0.1
0.02
0.01
I
5
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
0.005
500
1
0.2
0.05
0.02
SECOND BREAKDOWN LIMIT
THERMAL LIMIT @ 25
°
C
WIRE BOND LIMIT
20
200
10
T
C
≤
25
°
C
100 s
1ms
dc
0.01
0.1
0.5
2
5
Figure 6. Active Region Safe Operating Area
100
50
300
CURVES APPLY BELOW
RATED V
CEO
MJD50
MJD47
500 s
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on T
J(pk)
= 150 C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
150 C. T
J(pk)
may be calculated from the data in
Figure 5. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
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|---|---|
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| MJD50G | 功能描述:兩極晶體管 - BJT 1A 400V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD50T4 | 功能描述:兩極晶體管 - BJT NPN Hi-Volt Fast Sw RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD50T4G | 功能描述:兩極晶體管 - BJT 1A 400V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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