參數(shù)資料
型號: MJD44H11
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Complementary Power Transistors(互補型功率晶體管)
中文描述: 8 A, 80 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, CASE 369C-01, DPAK-3
文件頁數(shù): 6/7頁
文件大?。?/td> 76K
代理商: MJD44H11
MJD44H11 (NPN) MJD45H11 (PNP)
http://onsemi.com
6
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE O
D
A
K
B
R
V
S
F
L
G
2 PL
M
0.13 (0.005)
T
E
C
U
J
H
T
SEATING
Z
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
MIN
0.235
0.250
0.086
0.027
0.018
0.037
0.180 BSC
0.034
0.018
0.102
0.090 BSC
0.180
0.025
0.020
0.035
0.155
MAX
0.245
0.265
0.094
0.035
0.023
0.045
MIN
5.97
6.35
2.19
0.69
0.46
0.94
4.58 BSC
0.87
0.46
2.60
2.29 BSC
4.57
0.63
0.51
0.89
3.93
MAX
6.22
6.73
2.38
0.88
0.58
1.14
MILLIMETERS
INCHES
0.040
0.023
0.114
1.01
0.58
2.89
0.215
0.040
0.050
5.45
1.01
1.27
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1
2
3
4
5.80
0.228
2.58
0.101
1.6
0.063
6.20
0.244
3.0
0.118
6.172
0.243
mm
inches
SCALE 3:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
相關PDF資料
PDF描述
MJD45H11 Complementary Power Transistors(互補功率晶體管)
MJD50 High Voltage Power Transistors(高電壓功率晶體管)
MJE170 Complementary Plastic Silicon Power Transistors(互補型硅功率晶體管)
MJE180 Complementary Plastic Silicon Power Transistors(互補型硅功率晶體管)
MJE253 Complementary Silicon Power Plastic Transistors(互補型硅功率晶體管)
相關代理商/技術(shù)參數(shù)
參數(shù)描述
MJD44H11_03 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY SILICON PNP TRANSISTORS
MJD44H11_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Transistors
MJD44H11_09 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Complementary power transistors
MJD44H11_11 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Transistors
MJD44H11-001 功能描述:兩極晶體管 - BJT 8A 80V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2