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參數(shù)資料
| 型號： | MJD42_MJD42C |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | General Purpose Amplifier Low Speed Switching Applications |
| 中文描述： | 通用放大器低速開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 48K |
| 代理商： | MJD42_MJD42C |
2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
M
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
Collector Current (Pulse)
I
B
Base Current
P
C
Collector Dissipation (T
C
=25
°
C)
Collector Dissipation (T
a
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
V
CEO
(sus)
* Collector-Emitter Sustaining Voltage
I
CEO
Collector Cut-off Current
I
CES
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE
* DC Current Gain
* Pulse Test: PW
≤
300
μ
s, Duty Cycle
≤
2%
Parameter
Value
-100
-100
-5
-6
-10
-2
20
1.75
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
W
°
C
°
C
Test Condition
I
C
= - 30mA, I
B
= 0
V
CE
= -60V, I
B
= 0
V
CE
= -100V, V
BE
= 0
V
BE
= -5V, I
C
= 0
V
CE
= -4V, I
C
= -0.3A
V
CE
= -4V, I
C
= -3A
I
C
= -6A, I
B
= -600mA
V
CE
= -6A, I
C
= -4A
V
CE
= -10V, I
C
= -500mA
Min.
-100
Max.
Units
V
μ
A
μ
A
mA
-50
-10
-0.5
30
15
75
-1.5
-2
V
CE
(sat)
V
BE
(on)
f
T
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
Current Gain Bandwidth Product
V
V
3
MHz
MJD42C
General Purpose Amplifier
Low Speed Switching Applications
Load Formed for Surface Mount Application (No Suffix)
Straight Lead (I.PACK, “- I” Suffix)
Electrically Similar to Popular TIP42C
1.Base 2.Collector 3.Emitter
D-PAK
I-PAK
1
1
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