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參數(shù)資料
| 型號： | MJD32 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP Silicon Darlington Transistor(PNP達(dá)林頓硅晶體管（通用放大器和低速開關(guān)作用）) |
| 中文描述： | 3 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 107K |
| 代理商： | MJD32 |
2000 Fairchild Semiconductor International
Rev. A, February 2000
M
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
V
CEO
(sus)
* Collector-Emitter Sustaining Voltage
* Pulse Test: PW
≤
300
μ
s, Duty Cycle
≤
2%
Parameter
Value
- 40
- 100
Units
V
V
: MJD32
: MJD32C
V
CEO
Collector-Emitter Voltage
: MJD32
: MJD32C
- 40
- 100
V
V
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25
°
C)
Collector Dissipation (T
a
=25
°
C)
Junction Temperature
Storage Temperature
- 5
- 3
- 5
- 1
15
1.56
150
V
A
A
A
W
W
°
C
°
C
- 65 ~ 150
Test Condition
Min.
Max.
Units
: MJD32
: MJD32C
I
C
= - 30mA, I
B
= 0
-40
-100
V
V
I
CEO
Collector Cut-off Current
: MJD32
: MJD32C
V
CE
= - 40V, I
B
= 0
V
CE
= - 60V, I
B
= 0
-50
-50
μ
A
μ
A
I
CES
Collector Cut-off Current
: MJD32
: MJD32C
V
CE
= - 40V, V
BE
= 0
V
CE
= - 100V, V
BE
= 0
V
BE
= - 5V, I
C
= 0
V
CE
= - 4V, I
C
= - 1A
V
CE
= - 4V, I
C
= - 3A
I
C
= - 3, I
B
= - 375mA
V
CE
= - 4A, I
C
= - 3A
V
CE
= -10V, I
C
= - 500mA
-20
-20
-1
μ
A
μ
A
mA
I
EBO
h
FE
Emitter Cut-off Current
* DC Current Gain
25
10
50
-1.2
-1.8
V
CE
(sat)
V
BE
(on)
f
T
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
Current Gain Bandwidth Product
V
V
3
MHz
MJD32/32C
General Purpose Amplifier
Low Speed Switching Applications
D-PACK for Surface Mount Applications
Load Formed for Surface Mount Application (No Suffix)
Straight Lead (I.PACK, “- I” Suffix)
Electrically Similar to Popular TIP32 and TIP32C
1.Base 2.Collector 3.Emitter
D-PAK
I-PAK
1
1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD32/32C | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Purpose Amplifier Low Speed Switching Applications |
| MJD32-1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS |
| MJD32B | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJD32BT4 | 功能描述:兩極晶體管 - BJT PNP Gen Pur Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD32BTF | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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