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參數(shù)資料
| 型號： | MJD31C |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Power Transistors(補(bǔ)償型功率晶體管) |
| 中文描述： | 3 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 369C, DPAK-3 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大小： | 81K |
| 代理商： | MJD31C |
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD32 | Complementary Power Transistors(互補(bǔ)型功率晶體管) |
| MJD340 | High Voltage Power Transistors(高電壓功率晶體管) |
| MJD44E3 | Darlington Power Transistor(達(dá)林頓功率晶體管) |
| MJD44H11 | Complementary Power Transistors(互補(bǔ)型功率晶體管) |
| MJD45H11 | Complementary Power Transistors(互補(bǔ)功率晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD31C1 | 功能描述:兩極晶體管 - BJT 3A 100V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD31C-1 | 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, NPN Type, TO-252VAR |
| MJD31C-13 | 功能描述:兩極晶體管 - BJT 100V 5A NPN SMT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD31C1G | 功能描述:兩極晶體管 - BJT 3A 100V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD31C1G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR NPN 100V IPAK-4 |
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