參數(shù)資料
型號(hào): MJD253T4
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Complementary Silicon Plastic Power Transistor
中文描述: 4 A, 100 V, PNP, Si, POWER TRANSISTOR
封裝: PLASTIC, CASE 369C-01, DPAK-3
文件頁(yè)數(shù): 3/8頁(yè)
文件大小: 124K
代理商: MJD253T4
MJD243 (NPN), MJD253 (PNP)
http://onsemi.com
3
THERMAL CHARACTERISTICS
2. When surface mounted on minimum pad sizes recommended.
3. Pulse Test: Pulse Width = 300 s, Duty Cycle
2%.
4. f
T
=
h
FE
f
test
.
JunctiontoAmbient (Note 2)
R
JA
89.3
Collector Cutoff Current
(V
= 100 Vdc, I
= 0, T
= 125
°
C)
CB
E
CBO
100
DC Current Gain (Note 3)
(I
C
= 1.0 Adc, V
CE
= 1.0 Vdc)
BE(sat)
15
(I
C
= 500 mAdc, I
B
= 50 mAdc)
0.3
C
B
BaseEmitter On Voltage (Note 3) (I
C
= 500 mAdc, V
CE
= 1.0 Vdc)
V
BE(on)
1.5
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product (Note 4)
ob
f
T
40
CB
E
相關(guān)PDF資料
PDF描述
MJD31 Complementary Power Transistors(補(bǔ)償型功率晶體管)
MJD31C Complementary Power Transistors(補(bǔ)償型功率晶體管)
MJD32 Complementary Power Transistors(互補(bǔ)型功率晶體管)
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