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參數(shù)資料
| 型號(hào)： | MJ802-BP |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 30 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 封裝： | TO-3, 2 PIN |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 88K |
| 代理商： | MJ802-BP |
NPN High Power
Silicon Transistor
Features
With TO-3 package
Complement to PNP MJ4502
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
90
V
VCB
Collector-Base Voltage
100
V
VEB
Emitter-Base Voltage
4.0
V
IC
Collector Current
30
A
PD
Collector power dissipation
200
W
TJ
Junction Temperature
200
℃
TSTG
Storage Temperature
-65 to +200
℃
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
VCEO(SUS)
Collector-Emitter
sustaining Voltage*
(IC=200mAdc, IB=0)
90
---
Vdc
ICBO
Collector-Base Cutoff Current
(VCB=100Vdc,IE=0)
---
1.0
mAdc
IEBO
Emitter-Base Cutoff Current
(VEB=4.0Vdc, IC=0)
---
5.0
mAdc
ON CHARACTERISTICS
hFE
Forward Current Transfer ratio*
(IC=7.5Adc, VCE=2.0Vdc)
25
100
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=7.5Adc, IB=0.75Adc)
0.8
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=7.5Adc, IB=0.75Adc)
1.3
Vdc
DYNAMIC CHARACTERISTICS
fT
Current Gain — Bandwidth Product
(VCE=10Vdc, IB=1.0Adc, f=1.0MHz)
2.0
MHz
*Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
MJ802
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
www.mccsemi.com
Revision: 1
2003/04/21
TO-3
A
N
E
D
C
K
PIN 1.
BASE
PIN 2.
EMITTER
CASE.
COLLECTOR
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
1.550
REF
39.37
REF
B
-----
1.050
-----
26.67
C
.250
.335
6.35
8.51
D
.038
.043
0.97
1.09
E
0.55
0.70
1.40
1.77
G
.430
BSC
10.92
BSC
H
.215
BSC
5.46
BSC
K
.440
.480
11.18
12.19
L
.665
BSC
16.89
BSC
N
-----
.830
-----
21.08
Q
.151
.165
3.84
4.19
U
1.187
BSC
30.15
BSC
V
.131
.188
3.33
4.77
H
V
U
L
G
B
Q
1
2
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