參數(shù)資料
型號(hào): MJ413
廠商: Micro Commercial Components Corp.
英文描述: 10 Amp NPN Silicon Power Transistors 125W
中文描述: 10安培NPN硅功率晶體管功率為125
文件頁(yè)數(shù): 2/2頁(yè)
文件大?。?/td> 108K
代理商: MJ413
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Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(1)
(I
C
=100mA, I
B
=0)
Collector Cutoff Current
(V
CE
=400V, V
EB(off)
=1.5V) MJ413 MJ423
°
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Symbol
Min
Max
Unit
V
CEO(sus)
I
CEX
325
---
Vdc
MJ431
(V
CE
=400V, V
EB(off)
=1.5V, MJ413 MJ423
T
C
=125
:
) MJ431
Emitter Cutoff Current
(V
BE
=5.0Vdc, I
C
=0) MJ413 MJ423
MJ431
ON CHARACTERISTICS
DC Current Gain
(I
C
=0.5A, V
CE
=5.0V) MJ413
(I
C
=1.0A, V
CE
=5.0V)
(I
C
=1.0A, V
CE
=5.0V) MJ423
(I
C
=2.5A, V
CE
=5.0V)
(I
C
=2.5A, V
CE
=5.0V) MJ431
(I
C
=3.0A, V
CE
=5.0V)
Collector-Emitter Saturation Voltage
(I
C
=0.5A, I
B
=0.05A) MJ413
(I
C
=1.0A, I
B
=0.1A) MJ423
(I
C
=2.5A, I
B
=0.5A) MJ431
Base-Emitter Saturation Voltage
(I
C
=0.5A, I
B
=0.05A) MJ413
(I
C
=1.0A, I
B
=0.1A) MJ423
(I
C
=2.5A, I
B
=0.5A) MJ431
DYNAMIC CHARACTERISTICS
Current Gain
Bandwidth Product
(I
C
=200mA, V
CE
=10V, f=1.0MHz)
(1) Pulse Test: Pulse Width
0.25
2.5
0.5
5.0
mAdc
I
EBO
5.0
2.0
mAdc
h
FE
20
15
30
10
15
10
80
90
35
V
CE(sat)
0.6
0.
8
0.7
Vdc
V
BE(sat)
1.25
1.25
1.50
Vdc
f
T
2.5
MHz
V 'XW\ &\FOH
2.0%
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MJ413, MJ423 & MJ431
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PDF描述
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MJ423 10 Amp NPN Silicon Power Transistors 125W
MJ431 10 Amp NPN Silicon Power Transistors 125W
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