
Semiconductor Components Industries, LLC, 2004
September, 2004 Rev. P0
383
Publication Order Number:
MJ31193/D
MJ31193 (PNP)
MJ31194 (NPN)
Preferred Devices
Product Preview
Complementary PNPNPN
Silicon Power Transistors
The MJ31193 and MJ31194 are PowerBase
t transistors that are
specifically designed for high power audio output.
Features
High DC Current Gain
hFE = 25 Min @ IC = 10 A
Excellent Gain Linearity
Low Harmonic Distortion
Ultra High Safe Operation Area
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
250
Vdc
CollectorBase Voltage
VCBO
400
Vdc
EmitterBase Voltage
VEBO
5.0
Vdc
CollectorEmitter Voltage 1.5 V
VCEX
400
Vdc
Collector Current Continuous
IC
20
40
Adc
Base Current Continuous
IB
5.0
Adc
Total Power Dissipation @ TC = 25°C
Derate Above 25
°C
PD
300
1.71
Watts
W/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to
+200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoCase
R
θJC
0.58
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
5. Pulse Test: Pulse Width = 5
ms, Duty Cycle ≤ 10%.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
TO204 (TO3)
CASE 197A
STYLE 1
20 AMPERE
COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 VOLTS
300 WATTS
MARKING DIAGRAM
x
= 3 or 4
A
= Location Code
YY
= Year
WW
= Work Week
Preferred devices are recommended choices for future use
and best overall value.
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
MJ31193
TO204
100 Units/Tray
MJ31194
TO204
100 Units/Tray
MJ3119x
AYYWW