參數(shù)資料
型號： MJ21294G
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： NPN Silicon Power Transistor
中文描述： 20 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-204AA
封裝： LEAD FREE, TO-3, 2 PIN
文件頁數(shù)： 2/4頁
文件大小： 57K
代理商： MJ21294G
MJ21294
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
(I
C
= 100 mAdc, I
B
= 0)
V
CEO(sus)
250
Vdc
Collector Cutoff Current
(V
CE
= 200 Vdc, I
B
= 0)
I
CEO
100
Adc
Emitter Cutoff Current
(V
CE
= 5 Vdc, I
C
= 0)
I
EBO
10
Adc
Collector Cutoff Current
(V
CE
= 250 Vdc, V
BE(off)
= 1.5 Vdc)
I
CEX
100
Adc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(V
CE
= 40 Vdc, t = 1 s (nonrepetitive)
I
S/b
6.0
Adc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 8 Adc, V
CE
= 5 Vdc)
(I
C
= 16 Adc, V
CE
= 5 Vdc)
BaseEmitter On Voltage
(I
C
= 8 Adc, V
CE
= 5 Vdc)
CollectorEmitter Saturation Voltage
(I
C
= 8 Adc, I
B
= 0.8 Adc)
(I
C
= 16 Adc, I
B
= 3.2 Adc)
h
FE
40
15
100
V
BE(on)
1.4
Vdc
V
CE(sat)
0.5
1.0
Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(I
C
= 1 Adc, V
CE
= 10 Vdc, f
test
= 1 MHz)
f
T
4
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1
MHz)
NOTE:
Pulse Test: Pulse Width = 300 s, Duty Cycle
≤
2%
C
ob
500
pF
相關(guān)PDF資料
PDF描述
MJ21294 NPN Silicon Power Transistor(NPN型硅功率晶體管)
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