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參數(shù)資料
| 型號(hào)： | MJ15020 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | CASE 1-07, TO-3, 2 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 152K |
| 代理商： | MJ15020 |
MJ15020 NPN
MJ15021 PNP
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 1)
(IC = 100 mAdc, IB = 0)
MJ15020, MJ15021
VCEO(sus)
250
Vdc
Collector Cutoff Current (VCE = 200 Vdc, IB = 0)
MJ15020, MJ15021
ICEO
500
mAdc
Emitter Cutoff Current (VEB = 7.0 Vdc, IC = 0)
IEBO
500
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base ForwardBiased
(VCE = 50 Vdc, t = 0.5 s (nonrepetitive)
IS/b
3.0
Adc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.0 Adc, VCE = 4.0 V)
(IC = 3.0 Adc, VCE = 4.0 V)
hFE
30
10
CollectorEmitter Saturation Voltage (IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
1.0
Vdc
BaseEmitter on Voltage (IC = 1.0 Adc, VCE = 4.0 Vdc)
VBE(on)
2.0
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
20
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, Ftest = 1.0 MHz)
Cob
500
pF
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%
0
TC, CASE TEMPERATURE (°C)
0
25
75
80
40
100
125
POWER
DERA
TING
F
ACT
OR
(%)
175
200
60
20
SECOND BREAKDOWN
DERATING
THERMAL DERATING
50
100
150
Figure 1. Power Derating
相關(guān)PDF資料 |
PDF描述 |
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| MJ15021 | 4 A, 250 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| MJ15023 | 16 A, 250 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| MJ15023.MOD | 16 A, 250 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| MJ15025 | 16 A, 250 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| MJ15025.MOD | 16 A, 250 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJ15020G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Silicon Power Transistors |
| MJ15021 | 制造商:Motorola Inc 功能描述: |
| MJ15021G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Silicon Power Transistors |
| MJ15022 | 功能描述:兩極晶體管 - BJT 16A 200V 250W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJ15022_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Power Transistors |
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