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參數(shù)資料
| 型號： | MIG150Q201H |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Intelligent Power Module Silicon N Channel IGBT |
| 中文描述： | 東芝智能功率模塊IGBT的硅?頻道 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 136K |
| 代理商： | MIG150Q201H |
MIG150Q201H
2001-05-29
3
b. Brake Stage
(T
j
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
T
j
= 25°C
―
―
1
Collector cut-off current
I
CEX
V
CE
= 1200V
T
j
= 125°C
―
―
20
mA
T
j
= 25°C
―
2.7
3.5
Collector-emitter saturation voltage
V
CE
(sat)
V
D
= 15V, I
C
= 50A
V
IN
= 3V
→
0V
T
j
= 125°C
―
2.5
―
V
T
j
= 25°C
―
―
1
Reverse current
I
R
V
R
= 1200V
T
j
= 125°C
―
―
20
mA
Forward voltage
V
F
I
F
= 50A
―
1.4
2.2
V
t
on
0.7
1.4
2.0
t
c(on)
―
0.85
1.6
t
rr
―
0.42
0.5
t
off
―
1.9
2.6
Switching time
t
c(off)
V
CC
= 600V, I
C
= 50A
V
D
= 15V, V
IN
= 3V
Inductive load
0V
(Note 1)
―
0.4
0.8
μs
c. Control Stage
(T
j
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
High side
I
D
(H)
―
20
30
Control circuit
current
Low side
I
D
(L)
V
D
= 15 V
―
80
120
mA
Input-on signal voltage
V
IN (on)
V
D
= 15 V, I
C
= 150 mA
0.9
1.1
1.3
V
Protection
I
FO (on)
8
10
12
Fault output
current
Normal
I
FO (off)
V
D
= 15 V
―
―
0.1
mA
Inverter
230
320
―
Over current
protection
trip level
Brake
OC
V
D
= 15 V, T
j
≤
125°C
80
110
―
A
Inverter
320
400
―
Short current
protection
trip level
Brake
SC
V
D
= 15 V, T
j
≤
125°C
120
150
―
A
Over current cut-off time
t
off (OC)
V
D
= 15 V
―
5
―
μs
Trip level
OT
111
118
125
Over
temperature
protection
Reset level
OTr
Case temperature
―
98
―
°C
Trip level
UV
11.3
12.0
12.7
Control supply
under voltage
protection
Reset level
UVr
―
11.8
12.5
13.2
V
Fault output pulse width
t
FO
V
D
= 15 V
1
2
3
ms
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