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參數(shù)資料
| 型號： | MIE-324A4 |
| 廠商： | Unity Opto Technology |
| 英文描述： | AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE |
| 中文描述： | 的AlGaAs /砷化鎵大功率的T 1包紅外發(fā)光二極管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 32K |
| 代理商： | MIE-324A4 |
AlGaAs/GaAs HIGH POWER T-1 PACKAGE
INFRARED EMITTING DIODE
MIE-324A2
Description
Package Dimensions
The MIE-324A2 is a high power infrared eimtting
diode in GaAs technology with AlGaAs window
coating molded in water clear plastic package.
Features
l
High radiant power and high radiant intensity
l
Suitable ror DC and high pulse current operation
l
Standard T-1 (
φ
3mm) package, radiation angle: 40°
l
Peak wavelength
λ
p = 940 nm
l
Good spectral matching to si-photodetector
Absolute Maximum Ratings
@ T
A
=25
o
C
Unit
Parameter
Maximum Rating
Power Dissipation
120
mW
Peak Forward Current(300pps,10
μ
s pulse)
Continuos Forward Current
1
A
100
mA
Reverse Voltage
5
V
Operating Temperature Range
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Storage Temperature Range
Lead Soldering Temperature
02/04/2002
Unity Opto Technology Co., Ltd.
Unit : mm (inches )
C
A
2.54NOM.
(.100)
SEE NOTE 3
1.00MIN.
(.039)
SEE NOTE 2
φ
3.10±0.20
(.122±.008)
0.50 TYP.
(.020)
C
23.40MIN.
(.920)
φ
3.55±0.25
(.140±.010)
5.28±0.30
(.208±.012)
4.28±0.20
(.169±.008)
3.85
(.152)
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MIE-324H4 | 制造商:UOT 制造商全稱:Unity Opto Technology 功能描述:GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE |
| MIE-324L3 | 制造商:UOT 制造商全稱:Unity Opto Technology 功能描述:GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE |
| MIE-334A4 | 制造商:UOT 制造商全稱:Unity Opto Technology 功能描述:AlGaAs/GaAs T-1 PACKAGE INFRARED EMITTING DIODE |
| MIE-334H4 | 制造商:UOT 制造商全稱:Unity Opto Technology 功能描述:GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE |
| MIE-334L3 | 制造商:UOT 制造商全稱:Unity Opto Technology 功能描述:GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE |
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