參數(shù)資料
型號(hào)： MID122
廠商： DC Components Co., Ltd.
英文描述： TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR
中文描述： 技術(shù)規(guī)格NPN達(dá)林頓晶體管
文件頁數(shù)： 1/1頁
文件大?。?/td> 84K
代理商： MID122
MID122
DISCRETE SEMICONDUCTORS
R
DC COMPONENTS CO., LTD.
TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR
Pinning
1 = Base
2 = Collector
3 = Emitter
TO-251
Dimensions in inches and (millimeters)
.284(7.20)
.268(6.80)
.217(5.50)
.205(5.20)
.268(6.80)
.252(6.40)
(.256
(.035
(.032
(.181
.095(2.40)
.087(2.20)
.059(1.50)
.035(0.90)
.024(0.60)
.018(0.45)
.022(0.55)
.018(0.45)
.063(1.60)
.055(1.40)
1
2
3
2
Description
Designed for use in general purpose amplifier and
low speed switching applications.
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation(T
C
=25
o
C)
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Rating
100
100
5
8
20
+150
-55 to +150
Unit
V
V
V
A
W
o
C
o
C
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
V
CE(sat)1
V
CE(sat)2
V
BE(sat)
V
BE(on)
h
FE1
h
FE2
C
ob
Min
100
100
5
-
-
-
-
-
-
-
1K
100
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
130
Max
-
-
-
10
10
2
2
4
4.5
2.8
12K
-
-
Unit
V
V
V
μ
A
μ
A
mA
V
V
V
V
-
-
pF
Test Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
I
C
=1mA
I
C
=30mA
I
E
=1mA
V
CB
=100V
V
CE
=50V
V
EB
=5V
I
C
=4A, I
B
=16mA
I
C
=8A, I
B
=80mA
I
C
=8A, I
B
=80mA
I
C
=4A, V
CE
=4V
I
C
=4A, V
CE
=4V
I
C
=8A, V
CE
=4V
V
CB
=10V, f=1MHz
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
(
1)
Base-Emitter Saturation Voltage
(
1)
Base-Emitter On Voltage
(
1)
DC Current Gain
(1)
Output Capacitance
(1)Pulse Test: Pulse Width
380
μ
s, Duty Cycle
2%
Electrical Characteristics
(Ratings at 25
o
C ambient temperature unless otherwise specified)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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