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參數(shù)資料
| 型號： | MID-13A45 |
| 廠商： | Unity Opto Technology |
| 英文描述： | RECTIFIER BRIDGE 10A 200V 150A-ifsm 1.1V-vf 10uA-ir PBPC8 150/BOX |
| 中文描述： | 側(cè)視包裝npn型PHOTOTRSNSISTOR |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 36K |
| 代理商： | MID-13A45 |
SIDE LOOK PACKAGE
NPN PHOTOTRSNSISTOR
Description
Package Dimensions
The MID-13A45 is a Two Bits silicon phototransistor
mounted in a special dark plastic side looking package.
The lensing effect of the package allows a wide accep-
tance angle.
Features
l
Wide range of collector current
l
Low cost plastic package
l
High resolution for mouse application
Absolute Maximum Ratings
@ T
A
=25
o
C
Unit
Parameter
Maximum Rating
Power Dissipation
100
mW
Collector-Emitter Voltage
30
V
Emitter-Collector Voltage
5
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
V
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
02/04/2002
Unity Opto Technology Co., Ltd.
NOTES :
1. All dimensions are in millimeters.(inches).
2. Tolerance is ± 0.25mm (.010") unless otherwise noted .
3. Lead spacing is measured where the leads emerge from the package.
Unit: mm(inches)
.50MAX
(.020)MAX
.30MAX
(.012)MAX
2.30 ± .30
(.091±.012)
1
(
7
(
9
(
1.25
(.049)
1.25
(.049)
3*0.5
3.90
+0
-.20
3
(
2.00MAX(.079)MAX
2.00 ± .10
(.079±.004)
4.00 ±.10
(.158±.004)
.25MAX
(.010)MAX
2.45 ±.10
(.097±.004)
.80 ± .10
(.032±.004)
2.05
(.081)
R1.1
4
(
2.00
(.079)
5.60
(.221)
.25MAX
(.010)MAX
1
2
3
1
2
3
EMITTER (PTR A)
COLLECTOR(COM)
EMITTER (PTR B)
1
2
3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MID-14422 | SIDE LOOK PACKAGE NPN PHOTOTRANSISTOR |
| MID-14H22 | SIDE LOOK PACKAGE NPN PHOTOTRANSISTOR |
| MID-14A22 | SIDE LOOK PACKAGE NPN PHOTOTRANSISTOR |
| MID-18422 | 1.8mm PACKAGE NPN PHOTOTRANSISTOR |
| MID-18A22 | 1.8mm PACKAGE NPN PHOTOTRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MID-14422 | 制造商:UOT 制造商全稱:Unity Opto Technology 功能描述:SIDE LOOK PACKAGE NPN PHOTOTRANSISTOR |
| MID145-12A3 | 功能描述:IGBT 模塊 145 Amps 1200V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| MID-14A22 | 制造商:UOT 制造商全稱:Unity Opto Technology 功能描述:SIDE LOOK PACKAGE NPN PHOTOTRANSISTOR |
| MID-14H22 | 制造商:UOT 制造商全稱:Unity Opto Technology 功能描述:SIDE LOOK PACKAGE NPN PHOTOTRANSISTOR |
| MID150-12A4 | 功能描述:IGBT 模塊 150 Amps 1200V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
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