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參數(shù)資料
| 型號(hào)： | MIC94031BM4 |
| 廠商： | MICREL INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 1000 mA, 13.5 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SOT-143, 4 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 33K |
| 代理商： | MIC94031BM4 |
MIC94030/94031
Absolute Maximum Ratings
Voltage and current values are negative. Signs not shown or clarity.
Drain-to-Source Voltage (pulse)....................................16V
Gate-to-Source Voltage (pulse) ....................................16V
Continuous Drain Current
T
A
= 25
°
C ....................................................................1A
T
A
= 100
°
C ...............................................................0.5A
Operating Junction Temperature ............... –55
°
C to +150
°
Storage Temperature ............................... –55
°
C to +150
°
C
Micrel
6-42
1997
Electrical Characteristics
Voltage and current values are negative. Signs not shown for clarity.
Symbol
Parameter
Condition (Note 1)
Min
Typ
Max
Units
V
BDSS
V
GS
I
GSS
R
GS
C
ISS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 250
μ
A
V
DS
= 0V, V
GS
= 12V,
Note 2
,
Note 3
V
DS
= 0V, V
GS
= 12V,
Note 2
,
Note 4
V
GS
= 0V, V
DS
= 12V
V
DS
= 12V, V
GS
= 0V
V
DS
= 12V, V
GS
= 0V, T
J
= 125
°
C
V
DS
= 10V, V
GS
= 10V,
Note 5
V
GS
= 10V, I
D
= 100mA
V
GS
= 4.5V, I
D
= 100mA
V
GS
= 2.7V, I
D
= 100mA
V
DS
= 10V, I
D
= 200mA,
Note 5
13.5
V
Gate Threshold Voltage
0.6
1.0
1.4
V
Gate-Body Leakage
1
μ
A
Gate-Source Resistor
500
750
1000
k
Input Capacitance
100
pF
Zero Gate Voltage Drain Current
25
μ
A
0.010
250
μ
A
I
D(ON)
R
DS(ON)
On-State Drain Current
6.3
A
Drain-Source On-State Resist.
0.45
0.75
1.20
1.00
g
FS
Note 1
Note 2
Note 3
Note 4
Note 5
Forward Transconductance
480
mS
T
A
= 25
°
C unless noted. Substrate connected to source for all conditions
ESD gate protection diode conducts during positive gate-to-source voltage excursions.
MIC94030 only
MIC94031 only
Pulse Test: Pulse Width
≤
80
μ
sec, Duty Cycle
≤
0.5%
Total Power Dissipation
T
A
= 25
°
C ............................................................568mW
T
A
= 100
°
C ..........................................................227mW
Thermal Resistance
θ
JA......................................................................................
220
°
C/W
θ
JC.....................................................................................
130
°
C/W
Lead Temperature
1/16"from case, 10s ........................................... +300
°
C
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