參數(shù)資料
型號(hào)： MI2A3
廠商： Electronic Theatre Controls, Inc.
英文描述： Schottky Barrier Diodes
中文描述： 肖特基勢(shì)壘二極管
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 75K
代理商： MI2A3
35
Package
Part Number
V
RM
(V)
I
F (AV)
(
A
)
I
FSM
(
A
)
Half-Single Shot
12
12
30
30
40
40
40
50
50
100
50
25
30
40
40
60
40
50
50
80
100
150
150
V
F
(V)
max
0.47
0.39
0.36
0.45
0.36
0.55
0.45
0.36
0.45
0.45
0.45
0.55
0.36
0.55
0.55
0.55
0.36
0.55
0.45
0.55
0.45
0.47
0.48
I
F
(
A
)
I
R
(mA)
I
R
(H)
(mA)
V
R
= V
RM
max
1
2
1.5
1.0
3.0
0.2
2.0
4.5
3.0
5.0
3
1
1.5
5
5
5
3
5
3
5
5
10
15
V
R
= V
RM
max
70
110
70
35
140
20
70
210
100
250
100
50
70
50
50
50
140
50
100
50
250
350
500
Tj
(
°
C)
Tstg
(
°
C)
Ta
(
°
C)
Mass
(g)
Surface Mount
Axial
Center-tap
30
1.0
1.0
1.0
1.0
2.0
2.0
2.0
3.0
3.0
5.0
6.0
1.0
1.0
1.0
1.5
1.7
2.0
2.5
3.0
3.0
10
20
30
MI1A3
MI2A3
SFPA-53
SFPJ -53
SFPA-63
SFPE-63
SFPJ -63
SFPA-73
SFPJ -73
SPJ -G53S
SPJ -63S
AK 03
EA 03
EK 03
EK 13
RK 13
RA 13
RK 33
RJ 43
RK 43
FMJ -23L
FMJ -2203
FMJ -2303
1.0
1.0
1.0
1.0
2.0
2.0
2.0
3.0
3.0
5.0
3.0
1.0
1.0
1.0
2.0
2.0
2.0
2.5
3.0
3.0
5.0
10.0
15.0
70
70
20
20
20
20
20
20
20
5
5
22
20
20
17
15
15
12
8
8
4
4
4
82
—
85
—
86
87
—
87
—
88
93
—
0.011
0.011
0.072
0.072
0.072
0.072
0.072
0.072
0.072
0.29
0.29
0.13
0.3
0.3
0.3
0.45
0.45
0.6
1.2
1.2
2.1
2.1
2.1
: Under development
150
(Tj)
125
(Tj)
100
150
100
150
(Tj)
150
100
150
150
150
(Tj)
100
(Tj)
100
100
100
100
100
100
150
100
150
(Tj)
150
150
–
40 to +150
–
40 to +125
–
40 to +125
–
40 to +150
–
40 to +125
–
40 to +150
–
40 to +150
–
40 to +125
–
40 to +150
–
40 to +150
–
40 to +150
–
40 to +150
–
40 to +125
–
40 to +150
–
40 to +150
–
40 to +150
–
40 to +125
–
40 to +150
–
40 to +150
–
40 to +150
–
40 to +150
–
40 to +150
–
40 to +150
I
External Dimensions
Flammability: UL94V-0 or Equivalent (Unit: mm)
4.5
±
0.2
0
2.0min
1.35
±
0.4
1.35
±
0.4
5.1
2
±
0
2
±
0
1.1
±
0.2
1.5
±
0.2
5
±
1
2
±
0
2.4
±
0.1
0.57
±
0.02
Cathode Mark
6
±
0
5
±
0
2.7
±
0.2
0.6
±
0.05
Cathode Mark
6
±
0
5
±
0
2.7
±
0.2
0.78
±
0.05
Cathode Mark
6
±
0
7
±
0
4.0
±
0.2
0.78
±
0.05
Cathode Mark
5
±
0
1.4
±
0.1
6.5
±
0.2
Cathode Mark
8
±
0
6
±
0
7
±
0
4.0
±
0.2
0.98
±
0.05
Cathode Mark
C 0.5
1
(
8
0
3
1.35
0.85
4
10.0
2.2
2.6
4.2
2.8
2.54
2.54
0.45
3.3
2.6
±
0.2
3.6
±
0.2
0
±
0
1
±
0
1
±
0
0
t
Rth
(j- )
Rth
(j-c)
(
°
C/W)
Schottky Barrier Diodes
30V
Fig.
No.
P
c
c
+0.4
–
0.1
6.5
±
0.4
5.4
±
0.4
2.3
±
0.4
5.4
4.1
4.9
1
±
0
5
±
0
2
±
0
0.8
±
0.1
0.8
1.5max
±
0.1
0.55
±
0.1
0.55
±
0.1
1.15
±
0.1
1
2.29
±
0.5
2.29
±
0.5
0 to 0.25
0
±
0
2.9
0
1
5
0
a: Part Number
c: Lot No.
(Common to backside of case)
N.C
1 Chip
Anode
Cathode
Anode
Center-tap
Anode
Cathode (Common)
a
b
c
*
*
*
Surface Mount
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