參數(shù)資料
型號: MHL21336N
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: 3G Band RF Linear LDMOS Amplifier
中文描述: 3G頻段射頻線性LDMOS的放大器
文件頁數(shù): 2/5頁
文件大?。?/td> 117K
代理商: MHL21336N
2
RF Device Data
Freescale Semiconductor
MHL21336N
TYPICAL CHARACTERISTICS
2800
40
40
1400
ORL
G
p
f, FREQUENCY (MHz)
Figure 1. Power Gain, Input Return Loss,
Output Return Loss versus Frequency
Gp
V
DD
= 26 Vdc
T
C
= 25 C
30
20
10
0
10
20
30
1600
1800
2000
2200
2400
2600
IRL
25
55
1800
f, FREQUENCY (MHz)
Figure 2. P1dB, ITO versus Frequency
P
V
DD
= 26 Vdc
T
C
= 25 C
ITO
P1dB
50
45
40
35
30
1900
2000
2100
2200
2300
2400
2500
120
40
20
0
20
40
60
80
100
20
40
400
600
TEMPERATURE ( C)
Figure 3. Power Gain, I
DD
versus Temperature
G
p
V
DD
= 26 Vdc
f = 2140 MHz
I
DD
Gp
ID
35
550
30
500
25
450
120
40
20
0
20
40
60
80
100
42
48
32
38
TEMPERATURE ( C)
Figure 4. ITO, P1dB versus Temperature
V
DD
= 26 Vdc
f = 2140 MHz
ITO
P1dB
I
P
47
37
46
36
45
35
44
34
43
33
120
40
20
0
20
40
60
80
100
1500
1400
1.9
2.4
TEMPERATURE ( C)
Figure 5. Phase
(1)
, Group Delay
(1)
versus
Temperature
1. In Production Test Fixture
PHASE
V
DD
= 26 Vdc
f = 2140 MHz
GROUP DELAY
G
P
1420
2.3
1440
2.2
1460
2.1
1480
2
120
0
40
0.6
0
0.6
TEMPERATURE ( C)
Figure 6. Gain Flatness, Phase Linearity
versus Temperature
V
DD
= 26 Vdc
f = 2110 2170 MHz
GF
P
0.5
0.5
0.4
0.4
0.3
0.3
0.2
0.2
0.1
0.1
20
0
20
40
60
80
100
G
F
PHASE LINEARITY
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