參數(shù)資料
型號(hào)： MHL19338NN
廠商： 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述： PCS Band RF Linear LDMOS Amplifier
中文描述： PCS頻段的射頻線性LDMOS的放大器
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 75K
代理商： MHL19338NN
MHL19338NN
1
RF Device Data
Freescale Semiconductor
PCS Band
RF Linear LDMOS Amplifier
Designed for ultra-linear amplifier applications in 50 ohm systems operating
in the PCS frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for digital modulation systems, such as TDMA and
CDMA.
Third Order Intercept: 46 dBm Typ
Power Gain: 30 dB Typ (@ f = 1960 MHz)
Input VSWR
1.5:1
Features
Excellent Phase Linearity and Group Delay Characteristics
Ideal for Feedforward Base Station Applications
RoHS Compliant
L
Table 1. Absolute Maximum Ratings
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DC Supply Voltage
V
DD
30
Vdc
RF Input Power
P
in
+10
dBm
Storage Temperature Range
T
stg
- 40 to +100
°
C
Operating Case Temperature Range
T
C
- 20 to +100
°
C
Table 2. Electrical Characteristics
(V
DD
= 28 Vdc, T
C
= 25
°
C; 50
Ω
System)
Characteristic
Symbol
Min
Typ
Max
Unit
Supply Current
I
DD
—
500
525
mA
Power Gain
(f = 1960 MHz)
G
p
29
30
32
dB
Gain Flatness
(f = 1900 - 2000 MHz)
G
F
—
0.1
0.4
dB
Power Output @ 1 dB Compression
(f = 1950 MHz)
P1dB
35
36
—
dBm
Third Order Intercept (f1 = 1950 MHz, f2 = 1955 MHz)
ITO
45
46
—
dBm
Noise Figure
(f = 2000 MHz)
NF
—
4.2
4.5
dB
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
L
Document Number: MHL19338NN
Rev. 0, 12/2006
Freescale Semiconductor
Technical Data
MHL19338NN
1900-2000 MHz
4.0 W, 30 dB
RF LINEAR LDMOS AMPLIFIER
CASE 301AP-02, STYLE 1
Freescale Semiconductor, Inc., 2006. All rights reserved.
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