參數(shù)資料
型號(hào): MH204
英文描述: High Dynamic Range Cellular Band MMIC Mixer
中文描述: 高動(dòng)態(tài)范圍MMIC混頻器,蜂窩頻段
文件頁數(shù): 1/2頁
文件大?。?/td> 169K
代理商: MH204
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6620
e-mail: sales@wj.com
Web site: www.wj.com
April 2002
The Communications Edge
TM
Advanced Product Information
MH204
High Dynamic Range Cellular Band MMIC Mixer
Product Features
+30 dBm IIP3
RF 890 – 960 MHz
LO 1190 – 1310 MHz
IF 300 – 350 MHz
+17 dBm Drive Level
Low Cost SOIC-8 Package
No External Bias Required
Product Description
The MH204 is a passive GaAs MESFET mixer that
provides high dynamic range performance in a low
cost SOIC-8 package. WJ’s MH204 uses patented
techniques to realize greater than +30 dBm Input
IP3 at an LO drive level of +17 dBm when used in a
simple application circuit as an upconverting or
downconverting
configuration.
monolithic integrated circuit does not require any
external baluns or bias elements.
Typical applications include frequency up/down
conversion, modulation and demodulation for
receivers and transmitters used in 2.5G and 3G
systems using the cellular and GSM frequency
bands.
This
single
Functional Diagram
Function
Pin No.
LO
IF & RF
*
GND
2
5
1,3,4,6,8
* 4 external components (inductors & capacitors)
are required to diplex the signal
Specifications
Parameters
1
Units
Minimum
Typical
Maximum
Comments
Frequency Range:
SSB Conversion Loss
Noise Figure
Input IP3
2
Input P1dB
Isolation:
L-R
L-I
R-I
Return Loss:
LO Port
LO Drive Level
1. Data was taken using an application board shown on the following page, with a high side LO at +17 dBm in an downconverting application at 25°C.
2. Input IP3 was measured with two tones with an input power of -5 dBm / tone separated by 1 MHz.
Absolute Maximum Rating
3
RF
LO
IF
MHz
MHz
MHz
dB
dB
dBm
dBm
dB
dB
dB
dB
dBm
890
1190
300
960
1310
350
9.5
9.0
9.5
+30
TBD
25
50
TBD
-8
+17
Application Circuit
Parameters
Operating Case Temperature
Storage Temperature
Maximum Input LO Power
4
Rating
-40° to +85
°
C
-65° to +100 °C
+21 dBm
3. Operation of this device above any of these parameters may cause permanent damage.
4. Total sum of LO port and RF port power should not to exceed +23 dBm.
1
2
3
4
8
7
6
5
RF
C1
8.2 pF
IF
C2
3.9 pF
L2
12 nH
L1
23 nH
LO
All components are of size 0402
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