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參數(shù)資料
| 型號(hào)： | MGW30N60 |
| 廠商： | MOTOROLA INC |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Insulated Gate Bipolar Transistor |
| 中文描述： | 50 A, 600 V, N-CHANNEL IGBT, TO-247AE |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 214K |
| 代理商： | MGW30N60 |
1
Motorola, Inc. 1995
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operation at high frequencies.
Industry Standard High Power TO–247 Package with
Isolated Mounting Hole
High Speed Eoff: 60
J per Amp typical at 125
°
C
High Short Circuit Capability – 10 s minimum
Robust High Voltage Termination
Robust RBSOA
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
VCGR
VGE
IC25
IC90
ICM
600
Vdc
Collector–Gate Voltage (RGE = 1.0 M
)
Gate–Emitter Voltage — Continuous
600
Vdc
±
20
Vdc
Collector Current — Continuous @ TC = 25
°
C
— Continuous @ TC = 90
°
C
— Repetitive Pulsed Current (1)
50
30
100
Adc
Apk
Total Power Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
202
1.61
Watts
W/
°
C
Operating and Storage Junction Temperature Range
TJ, Tstg
tsc
–55 to 150
°
C
Short Circuit Withstand Time
(VCC = 360 Vdc, VGE = 15 Vdc, TJ = 25
°
C, RG = 20
)
10
s
Thermal Resistance — Junction to Case – IGBT
— Junction to Ambient
R
θ
JC
R
θ
JA
0.62
45
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 5 seconds
TL
260
°
C
Mounting Torque, 6–32 or M3 screw
10 lbf in (1.13 N m)
(1) Pulse width is limited by maximum junction temperature.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MGW30N60/D
SEMICONDUCTOR TECHNICAL DATA
IGBT IN TO–247
30 A @ 90
°
C
50 A @ 25
°
C
600 VOLTS
SHORT CIRCUIT RATED
CASE 340F–03, Style 4
TO–247AE
Motorola Preferred Device
G
C
E
C
E
G
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