參數(shù)資料
型號： MGW14N60ED
廠商： MOTOROLA INC
元件分類： IGBT 晶體管
英文描述： 18 A, 600 V, N-CHANNEL IGBT, TO-247AE
封裝： CASE 340K-01, 3 PIN
文件頁數(shù)： 4/6頁
文件大?。?/td> 154K
代理商： MGW14N60ED
MGW14N60ED
4
Motorola IGBT Device Data
Figure 5. Capacitance Variation
Figure 6. Gate–to–Emitter Voltage
versus Total Charge
Figure 7. Total Energy Losses versus
Gate Resistance
Figure 8. Total Energy Losses versus
Junction Temperature
Figure 9. Total Energy Losses versus
Collector Current
Figure 10. Turn–Off Energy Losses
versus Gate Resistance
510
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
2400
1600
800
0
Qg, TOTAL GATE CHARGE (nC)
20
0
20
16
12
4
0
40
C,
CAP
ACIT
ANCE
(pF)
15
25
20
80
60
8
V
GE
,GA
TE–T
O–EMITTER
VOL
TAGE
(VOL
TS)
Cies
Coes
Cres
TJ = 25°C
VGE = 0 V
QT
Q2
Q1
TJ = 25°C
VCC = 300 V
IC = 10 A
65
5
RG, GATE RESISTANCE (OHMS)
1.75
1.25
0.75
E
0.25
20
35
50
TJ = 125°C
VDD = 360 V
VGE = 15 V
IC = 10 A
7.5 A
5.0 A
,T
O
TA
LENERGY
LOSSES
(mJ)
TS
45
5
RG, GATE RESISTANCE (OHMS)
0.8
0.6
0.4
E
0.2
15
25
35
TJ = 125°C
VDD = 360 V
VGE = 15 V
IC = 10 A
7.5 A
5.0 A
,TURN–OFF
ENERGY
LOSSES
(mJ)
of
f
TJ, JUNCTION TEMPERATURE (°C)
–50
0.2
0
–25
0
25
0.4
0.8
0.6
50
75
100
125
VCC = 360 V
VGE = 15 V
RG = 20 W
IC = 10 A
7.5 A
5.0 A
E
,T
O
TA
LENERGY
LOSSES
(mJ)
TS
1.0
10
7.5
0
IC, COLLECTOR CURRENT (AMPS)
0.8
0.4
0
5
0.6
0.2
1.0
TJ = 125°C
VCC = 360 V
VGE = 15 V
RG = 20 W
E
,T
O
TA
LENERGY
LOSSES
(mJ)
TS
2.5
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