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參數(shù)資料
| 型號(hào)： | MGV12N120D |
| 廠商： | Motorola, Inc. |
| 英文描述： | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| 中文描述： | 絕緣柵雙極晶體管的反并聯(lián)二極管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 79K |
| 代理商： | MGV12N120D |
1
Motorola, Inc. 1995
N–Channel Enhancement Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage blocking capability. Short circuit rated IGBTs are
specifically suited for applications requiring a guaranteed short
circuit withstand time. Fast switching characteristics result in
efficient operations at high frequencies. Co–packaged IGBTs
save space, reduce assembly time and cost.
High Power Surface Mount D3PAK Package
High Speed Eoff: 160 J/A typical at 125
°
C
High Short Circuit Capability – 10 s minimum
Soft Recovery Free Wheeling Diode is included in the package
Robust High Voltage Termination
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
VCGR
VGE
IC25
IC90
ICM
1200
Vdc
Collector–Gate Voltage (RGE = 1.0 M
)
Gate–Emitter Voltage — Continuous
1200
Vdc
±
20
Vdc
Collector Current — Continuous @ TC = 25
°
C
— Continuous @ TC = 90
°
C
— Repetitive Pulsed Current (1)
20
12
40
Adc
Apk
Total Power Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
123
0.98
Watts
W/
°
C
Operating and Storage Junction Temperature Range
TJ, Tstg
tsc
–55 to 150
°
C
Short Circuit Withstand Time
(VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125
°
C, RG = 20
)
10
s
Thermal Resistance — Junction to Case – IGBT
— Junction to Case – Diode
— Junction to Ambient
R
θ
JC
R
θ
JC
R
θ
JA
TL
1.02
1.41
45
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 5 seconds
260
°
C
(1) Pulse width is limited by maximum junction temperature.
This document contains information on a new product. Specifications and information are subject to change without notice.
Order this document
by MGV12N120D/D
SEMICONDUCTOR TECHNICAL DATA
IGBT & DIODE IN D3PAK
12 A @ 90
°
C
20 A @ 25
°
C
1200 VOLTS
SHORT CIRCUIT RATED
CASE 433–01, Style 1
TO–268AA
G
C
E
C
E
G
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