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| 型號： | MGSF3454VT3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 4.2 A, 30 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TSOP-6 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 125K |
| 代理商： | MGSF3454VT3 |
MGSF3454VT1
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 7. Source–Drain Diode Forward Voltage
Figure 8. On–Resistance vs. Gate–to–Source Voltage
Figure 9. Threshold Voltage
NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
IMPEDANCE
Square Wave Pulse Duration (sec)
2
0.1
0.01
1.0E–04
1.0E–03
1.0E–02
1.0E–01
1.0E+00
1.0E+01
Figure 10. Single Pulse Power
Figure 11. Normalized Thermal Transient Impedance, Junction–to–Ambient
TJ, TEMPERATURE (°C)
25
50
75
100
125
ID = 250 A
150
–0.8
0.4
0.2
0.0
–0.2
–0.4
–0.6
0
VSD, SOURCE–TO–DRAIN VOLTAGE (V)
I S
,SOURCE
CURRENT
(A)
1
10
40
TJ = 150°C
0
0.25
0.50
0.75
1.00
1.25
1.5
1.75
02
4
6
8
10
0
0.04
0.08
0.12
R
DS(on)
,ON–RESIST
ANCE
(OHMS)
VGS – GATE–TO–SOURCE VOLTAGE (V)
0.16
0.20
ID = 4.2 A
0.01
0.10
1.00
10.00
0
6
12
18
POWER
(W)
TIME (sec)
24
30
TJ = 25°C
–25
–50
V
,V
ARIANCE
(V)
GS(th)
1
0.2
Duty Cycle = 0.5
0.05
SINGLE PULSE
0.1
0.02
R
θJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
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