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參數(shù)資料
| 型號(hào)： | MGP7N60ED |
| 廠商： | MOTOROLA INC |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 10 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大小： | 120K |
| 代理商： | MGP7N60ED |
MGP7N60ED
3
Motorola IGBT Device Data
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(IEC = 2.3 Adc)
(IEC = 2.3 Adc, TJ = 125°C)
(IEC = 4.6 Adc)
VFEC
—
1.7
1.3
2.0
—
2.3
Vdc
Reverse Recovery Time
trr
—
40
—
ns
(IF = 4.6 Adc,
VR = 360 Vdc
ta
—
17
—
VR = 360 Vdc,
dIF/dt = 200 A/ms)
tb
—
23
—
Reverse Recovery Stored Charge
dIF/dt
200 A/
ms)
QRR
—
60
—
nC
Reverse Recovery Time
(I
4 6 Adc
trr
—
105
—
ns
(IF = 4.6 Adc,
VR = 360 Vdc,
ta
—
36
—
VR = 360 Vdc,
dIF/dt = 200 A/ms,
TJ = 125°C)
tb
—
69
—
Reverse Recovery Stored Charge
TJ = 125°C)
QRR
—
247
—
nC
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25
″ from package to emitter bond pad)
LE
—
7.5
—
nH
Figure 1. Output Characteristics
Figure 2. Output Characteristics
Figure 3. Transfer Characteristics
Figure 4. Collector–To–Emitter Saturation
Voltage versus Junction Temperature
8
0
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
15
20
10
I C
,COLLECT
OR
CURRENT
(AMPS)
5
0
3
12
4
5
6
7
8
0
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
15
20
10
I C
,COLLECT
OR
CURRENT
(AMPS)
5
0
3
12
4
5
6
7
TJ = 25°C
VGE = 10 V
12.5 V
15 V
17.5 V
20 V
TJ = 125°C
VGE = 10 V
12.5 V
15 V
17.5 V
20 V
10
12
5
VGE, GATE-TO-EMITTER VOLTAGE (VOLTS)
12
8
6
4
2
0
TJ, JUNCTION TEMPERATURE (°C)
-25
-50
2.2
1.8
1.6
1.4
1.2
1.0
0
11
V CE(on)
,COLLECT
OR-T
O-EMITTER
ON-ST
AT
E
6
7
8
9
25
50
75
100
125
150
I C
,COLLECT
OR
CURRENT
(AMPS)
13
10
2.0
IC = 5.0 A
3.75 A
2.5 A
TJ = 125°C
25°C
VOL
TAGE
(VOL
TS)
VCE = 100 V
5 mS PULSE WIDTH
VGE = 15 V
80 mS PULSE WIDTH
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