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參數資料
| 型號： | MGFS48V2527 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 2.5 - 2.7GHz BAND 60W GaAs FET |
| 中文描述： | 2.5 - 2.7GHz頻帶的60瓦砷化鎵場效應管 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 228K |
| 代理商： | MGFS48V2527 |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFS48B2122
2.11 - 2.17 GHz BAND 60W GaAs FET
The MGFS48B2122 is a 60W push-pull type GaAs Power FET
especially designed for use in 2.11 - 2.17GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees
high reliability.
OUTLINE
)($785(6
Push-pull configuration
High output power
Pout = 60W (TYP.) @ f=2.17 GHz
High power gain
GLP = 12 dB (TYP.) @ f=2.17GHz
High power added efficiency
P.A.E. = 48 % (TYP.) @ f=2.17GHz
2.11-2.17GHz band power amplifier for W-CDMA Base Station
IG
VDS = 12 (V)
ID = 2.0 (A)
RG=20 (ohm) for each gate
$%62/87(0$;,0805$7,1*6
Symbol
Parameter
VGDO
Gate to drain voltage
VGSO
Gate to source voltage
PT *1
Total power dissipation
Tch
Channel temperature
Tstg
Storage temperature
(Ta=25deg.C)
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them.Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (1)placement of
substitutive, auxiliary circuits, (2)use of non-flammable
material or (3)prevention against any malfunction or mishap.
Ratings
-20
-10
125
175
-65 / +175
Unit
V
V
W
deg.C
deg.C
*1 : Tc=25deg.C
(/(&75,&$/&+$5$&7(5,67,&6
Symbol
Parameter
(Ta=25deg.C)
Test conditions
Limits
Typ.
Unit
Min.
Max.
GLP
Linear power gain
Pin=22dBm
11
12
-
dB
Pout
Output power
VDS=12V, ID(RF off)=2.0A
47
48
-
dBm
ID(RF)
Drain current
Pin=39dBm
f=2.17GHz
-
11
15
A
P.A.E.
Power added efficiency
-
48
-
%
Rth (ch-c)
Thermal resistance
Channel to Case
-
1
1.2
deg.C/W
June-'04
MITSUBISHI
ELECTRIC
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相關代理商/技術參數 |
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| MGFS48V2527_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.5 - 2.7GHz BAND 60W GaAs FET |
| MGFS52B2122 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.1 = 2.2 GHz BAND 100W GsAs FET |
| MGFS52BN2122A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.1-2.2 GHz BAND 160W GaAs FET |
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