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參數(shù)資料
| 型號： | MGFK35V2228 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | Aluminum Electrolytic Radial Lead Low Impedance Capacitor; Capacitance: 2700uF; Voltage: 10V; Case Size: 12.5x20 mm; Packaging: Bulk |
| 中文描述： | 12.2 - 12.8GHz頻段3W內(nèi)部匹配砷化鎵場效應管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 96K |
| 代理商： | MGFK35V2228 |
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MGFK35V2732 | 12.7-13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET |
| MGFK35V4045 | Aluminum Electrolytic Radial Lead Low Impedance Capacitor; Capacitance: 470uF; Voltage: 10V; Case Size: 8x11.5 mm; Packaging: Bulk |
| MGFK37V4045 | DIODE ZENER TRIPLE ISOLATED 200mW 3.6Vz 5mA-Izt 0.0556 5uA-Ir 1 SOT-363 3K/REEL |
| MGFK38A3745 | 13.75-14.50GHz BAND 6W INTERNALLY MATCHED GaAs FET |
| MGFK38V2228 | RECTIFIER BRIDGE 35A 1000V 400A-ifsm 1.1V-vf 5uA-ir GBPCW 100/TRAY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGFK35V2732 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:12.7-13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET |
| MGFK35V4045 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:14.0-14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET |
| MGFK35V4045_03 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:14.0-14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET |
| MGFK35V4045_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:X/Ku band internally matched power GaAs FET |
| MGFK36V4045 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET |
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