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參數(shù)資料
| 型號(hào)： | MGFC45V6472A |
| 元件分類： | 功率晶體管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封裝： | HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 263K |
| 代理商： | MGFC45V6472A |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC45V6472A
6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
TYPICAL CHARACTERISTICS (Ta=25deg.C)
S PARAMETERS (Ta=25deg.C,VDS=10V,ID=8.0A)
S Parameters (TYP.)
f
S11
S21
S12
S22
(GHz)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
6.4
0.66
100
2.39
-106
0.057
-171
0.32
74
6.5
0.61
84
2.43
-122
0.065
174
0.34
64
6.6
0.56
70
2.47
-138
0.071
160
0.35
52
6.7
0.50
57
2.54
-154
0.079
145
0.35
40
6.8
0.43
42
2.59
-170
0.088
131
0.34
27
6.9
0.35
27
2.66
173
0.095
116
0.31
12
7.0
0.24
12
2.73
155
0.101
100
0.27
-8
7.1
0.15
1
2.75
143
0.105
88
0.24
-27
7.2
0.01
-10
2.72
123
0.109
70
0.20
-61
June/2004
P1dB ,GLP vs. f
42
43
44
45
46
47
6.3
6.4 6.5 6.6 6.7
6.8 6.9
7.0 7.1 7.2 7.3
FREQUENCY f(GHz)
OUTPUT
POWER
P1dB
(dBm)
7
8
9
10
11
12
LINEAR
POWER
GAIN
GLP(dB)
P1dB
GLP
VDS=10(V)
IDS=8(A)
Po , PAE vs. Pin
25
30
35
40
45
50
20
25
30
35
40
45
INPUTPOWER Pin(dBm)
OUTPUT
POWER
Po(dBm)
0
10
20
30
40
50
POWER
ADDED
EFFICIECY
PAE
(%)
VDS=10(V)
IDS=8(A)
f=6.8(GHz)
Po
PAE
Po,IM3 vs.Pin
16
20
24
28
32
36
40
44
18
20
22
24
26
28
30
32
34
36
INPUT POWER Pin (dBm S.C.L.)
OUTPUT
POWER
Po
(dBm
S.C.L.)
-70
-60
-50
-40
-30
-20
-10
0
IM3
(dBc)
VDS=10(V)
IDS=8(A)
f=7.2(GHz)
Delta f=10(MHz)
Po
IM3
MITSUBISHI
ELECTRIC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGFC45V6472A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC47A4450 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4.4~5.0GHz BAND 50W INTERNALLY MATCHED GaAs FET |
| MGFC47A7785 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7.7 - 8.5GHz BAND 50W INTERNALLY MATCHED GaAs FET |
| MGFC47B3538B | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band Internally Matched Power GaAs FET |
| MGFC47V5864 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.8-6.4GHz BAND 50W INTERNALLY MATCHED GaAs FET |
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