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參數(shù)資料
| 型號： | MGFC42V3436 |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封裝： | HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 0K |
| 代理商： | MGFC42V3436 |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC42V3436
3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC42V3436 is an internally impedance-matched
OUTLINE DRAWING
Unit: millimeters
GaAs power FET especially designed for use in 3.4 - 3.6
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 16W (TYP.) @ f=3.4 - 3.6 GHz
High power gain
GLP = 14 dB (TYP.) @ f=3.4 - 3.6GHz
High power added efficiency
P.A.E. = 37 % (TYP.) @ f=3.4 - 3.6GHz
Low distortion [item -51]
IM3=-45dBc(Min.) @Po=32dBm S.C.L.
APPLICATION
item 01 : 3.4 - 3.6 GHz band power amplifier
item 51 : 3.4 - 3.6 GHz band digital radio communication
QUALITY GRADE
IG
(1): GATE
RECOMMENDED BIAS CONDITIONS
(2): SOURCE (FLANGE)
VDS = 10 (V)
GF-18
(3): DRAIN
ID = 4.5 (A)
RG=25 (ohm)
ABSOLUTE MAXIMUM RATINGS
(Ta=25deg.C)
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
Symbol
Parameter
Ratings
Unit
making semiconductor products better and more reliable,
VGDO
Gate to drain voltage
-15
V
but there is always the possibility that trouble may occur
VGSO
Gate to source voltage
-15
V
with them. Trouble with semiconductors may lead to personal
ID
Drain current
15
A
injury, fire or property damage. Remember to give due
IGR
Reverse gate current
-40
mA
consideration to safety when making your circuit designs,
IGF
Forward gate current
84
mA
with appropriate measures such as (1)placement of
PT
Total power dissipation
*1
78.9
W
substitutive, auxiliary circuits, (2)use of non-flammable
Tch
Channel temperature
175
deg.C
material or (3)prevention against any malfunction or mishap.
Tstg
Storage temperature
-65 / +175
deg.C
*1 : Tc=25deg.C
ELECTRICAL CHARACTERISTICS
(Ta=25deg.C)
Symbol
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
IDSS
Saturated drain current
VDS = 3V , VGS = 0V
-
11
-
A
gm
Transconductance
VDS = 3V , ID = 4.4A
-
4
-
S
VGS(off)
Gate to source cut-off voltage
VDS = 3V , ID = 80mA
-
-4.5
V
P1dB
Output power at 1dB gain
compression
41.5
42.5
-
dBm
GLP
Linear power gain
VDS=10V, ID(RF off)=4.5A, f=3.4 - 3.6GHz
12
14
-
dB
ID
Drain current
-
4.5
-
A
P.A.E.
Power added efficiency
-
37
-
%
IM3
3rd order IM distortion
*1
-42
-45
-
dBc
Rth(ch-c)
Thermal resistance
*2
delta Vf method
-
1.9
deg.C/W
*1 : item -51, 2 tone test, Po=32dBm Single Carrier Level, f=3.6GHz, delta f=5MHz
*2 : Channel-case
June/2004
MITSUBISHI
ELECTRIC
4.0+/-0.4
1.4
2MIN
2.4+/-0.2
0.1
17.4+/-0.3
R1.25
2MIN
0.6+/-0.15
(1)
24+/-0.3
20.4+/-0.2
13.4
(3)
8.0+/-0.2
R1.2
15.8
(2)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGFC42V3436_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET |
| MGFC42V3742 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:3.7 - 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET |
| MGFC42V3742_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:3.7 ~ 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET |
| MGFC42V3742A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:3.7- 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET |
| MGFC42V4450 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4.4 - 5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET |
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