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參數(shù)資料
| 型號： | MGFC41V5964 |
| 元件分類： | 功率晶體管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封裝： | HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 1489K |
| 代理商： | MGFC41V5964 |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC41V5964
5.9-6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET
TYPICAL CHARACTERISTICS (Ta=25 DegreesC)
S PARAMETERS (Ta=25 DegreesC , VDS=10V , IDS=3.4A)
S Parameters (TYP.)
f
S11
S21
S12
S22
(GHz)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
5.9
0.37
124
2.98
-81
0.051
-131
0.31
111
6.0
0.35
105
2.94
-96
0.053
-145
0.31
102
6.1
0.32
84
2.91
-112
0.058
-163
0.30
94
6.2
0.29
64
2.88
-128
0.060
-177
0.29
87
6.3
0.25
38
2.86
-144
0.064
167
0.26
82
6.4
0.23
8
2.83
-161
0.066
152
0.22
81
MITSUBISHI
ELECTRIC
Po,Eadd vs. Pin
20
25
30
35
40
45
15
20
25
30
35
INPUT POWER Pin (dBm)
O
U
T
P
U
T
PO
W
E
R
Po
(d
Bm
)
0
20
40
60
80
100
VDS=10
V
IDS 6 4
VDS=10V
ID=3.4A
f=6.15GHz
Po
Eadd
P
O
W
E
R
A
D
DE
D
E
F
IC
IE
N
CY
E
a
d
(
%
)
Po,IM3 vs. Pin
24
26
28
30
32
34
36
17
19
21
23
25
27
INPUT POWER Pin (dBm) S.C.L.
O
U
T
P
U
T
PO
W
E
R
Po
(d
Bm
)S.
C.
L
.
-60
-50
-40
-30
-20
-10
0
IM3
Po
IM
3
(
d
B
c
)
VDS=10V
IDS=3.4A
f=6.4GHz
Delta f=10MHz
2-tone test
P1dB,GLP vs. f
37
38
39
40
41
42
43
5.8
5.9
6.0
6.1
6.2
6.3
6.4
6.5
FREQUENCY f (GHz)
O
U
T
P
U
T
PO
W
E
R
P
1
d
B
(
d
Bm
)
6
8
10
12
14
16
18
L
IN
E
A
R
PO
W
E
R
G
A
IN
G
L
P
(d
B)
VDS=10V
ID=3.4A
P1dB
GLP
June/2004
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MGFC41V5964_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET |
| MGFC41V6472 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:6.4 ~ 7.2GHz BAND 12W INTERNALLY MATCHED GaAs FET |
| MGFC41V7177 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7.1 - 7.7GHz BAND 12W INTERNALLY MATCHED GaAs FET |
| MGFC42V3436 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET |
| MGFC42V3436_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET |
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