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參數(shù)資料
| 型號： | MGFC40V5258 |
| 元件分類： | 功率晶體管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封裝： | HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 242K |
| 代理商： | MGFC40V5258 |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC40V5258
5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC40V5258 is an internally impedance-matched
OUTLINE DRAWING
Unit: millimeters
GaAs power FET especially designed for use in 5.2 - 5.8
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 10W (TYP.) @ f=5.2 - 5.8 GHz
High power gain
GLP = 10 dB (TYP.) @ f=5.2 - 5.8GHz
High power added efficiency
P.A.E. = 32 % (TYP.) @ f=5.2 - 5.8GHz
APPLICATION
item 01 : 5.2 - 5.8 GHz band power amplifier
item 51 : 5.2 - 5.8 GHz band digital radio communication
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
(1): GATE
VDS = 10 (V)
GF-18
(2): SOURCE (FLANGE)
ID = 2.4 (A)
(3): DRAIN
RG=50 (ohm)
ABSOLUTE MAXIMUM RATINGS
(Ta=25deg.C)
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
Symbol
Parameter
Ratings
Unit
making semiconductor products better and more reliable,
VGDO
Gate to drain voltage
-15
V
but there is always the possibility that trouble may occur
VGSO
Gate to source voltage
-15
V
with them. Trouble with semiconductors may lead to personal
ID
Drain current
7.5
A
injury, fire or property damage. Remember to give due
IGR
Reverse gate current
-20
mA
consideration to safety when making your circuit designs,
IGF
Forward gate current
42
mA
with appropriate measures such as (1)placement of
PT
Total power dissipation
*1
42.8
W
substitutive, auxiliary circuits, (2)use of non-flammable
Tch
Channel temperature
175
deg.C
material or (3)prevention against any malfunction or mishap.
Tstg
Storage temperature
-65 / +175
deg.C
*1 : Tc=25deg.C
ELECTRICAL CHARACTERISTICS
(Ta=25deg.C)
Symbol
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
IDSS
Saturated drain current
VDS = 3V , VGS = 0V
-
4.5
6
A
gm
Transconductance
VDS = 3V , ID = 2.2A
-
2
-
S
VGS(off)
Gate to source cut-off voltage
VDS = 3V , ID = 40mA
-2
-3
-4
V
P1dB
Output power at 1dB gain
compression
39.5
40.5
-
dBm
GLP
Linear power gain
VDS=10V, ID(RF off)=2.4A, f=5.2 - 5.8GHz
8
10
-
dB
ID
Drain current
-
2.4
-
A
P.A.E.
Power added efficiency
-
32
-
%
Rth(ch-c)
Thermal resistance
*1
delta Vf method
-
3.5
deg.C/W
*1 : Channel-case
June/2004
MITSUBISHI
ELECTRIC
4.
0+
/-
0.
4
1.
4
2M
IN
2.
4+
/-
0.
2
0.
1
17
.4
+
/-
0.
3
R1.25
2M
IN
0.6+/-0.15
(1)
24+/-0.3
20.4+/-0.2
13.4
(3)
8.
0+
/-
0.
2
R1.2
15
.8
(2)
相關(guān)PDF資料 |
PDF描述 |
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| MGFC40V5964-01 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC40V5964A | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC40V6472-01 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC40V6472-51 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC40V6472A-51 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGFC40V5258_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET |
| MGFC40V5258_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
| MGFC40V5964 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET |
| MGFC40V5964_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET |
| MGFC40V5964_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
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