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參數(shù)資料
| 型號(hào)： | MGFC39V6472A |
| 元件分類： | 功率晶體管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封裝： | HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 180K |
| 代理商： | MGFC39V6472A |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC39V6472A
6.4 ~ 7.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
DESCRIPTION
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 8W (TYP.) @ f=6.4~7.2GHz
High power gain
GLP = 9 dB (TYP.) @ f=6.4~7.2GHz
High power added efficiency
P.A.E. = 28 % (TYP.) @ f=6.4~7.2GHz
Low distortion [ item -51 ]
IM3= -45 dBc(TYP.) @Po=28dBm S.C.L.
APPLICATION
item 01 : 6.4~7.2 GHz band power amplifier
item 51 : 6.4~7.2 GHz band digital radio communication
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID = 2.4 (A)
Refer to Bias Procedure"
RG= 50 (ohm)
ABSOLUTE MAXIMUM RATINGS
(Ta=25 deg.C)
Symbol
Parameter
Ratings
Unit
VGDO
Gate to drain voltage
-15
V
VGSO
Gate to source voltage
-15
V
ID
Drain current
7.5
A
IGR
Reverse gate current
-20
mA
IGF
Forward gate current
42
mA
PT
Total power dissipation *1
42.8
W
Tch
Channel temperature
175
deg.C
Tstg
Storage temperature
-65 / +175
deg.C
*1 : Tc=25 deg.C
ELECTRICAL CHARACTERISTICS
(Ta=25 deg.C)
Limits
Min.
Typ.
Max.
IDSS
Saturated drain current
VDS=3V, VGS=0V
-
7.5
A
gm
Transconductance
VDS=3V, ID=2.2A
-
2
-
S
VGS(off)
Gate to source cut-off voltage
VDS=3V, ID=20mA
-
-4.5
V
P1dB
Output power at 1dB gain compression
38
39.5
-
dBm
GLP
Linear power gain
VDS=10V, ID(RF off)=2.4A, f=6.4~7.2GHz
7
9
-
dB
ID
Drain current
-
3
A
P.A.E.
Power added efficiency
-
28
-
%
IM3
3rd order IM distortion
*1
-42
-45
-
dBc
Rth(ch-c)
Thermal resistance
*2
Delta Vf method
-
3.5
deg.C/W
*1 : item -51, 2 tone test, Po=28dBm Single Carrier Level, f=7.2GHz, Delta f=10MHz
*2 : Channel to case
MITSUBISHI
June/2004
ELECTRIC
The MGFC39V6472A is an internally impedance-matched
GaAs power FET especially designed for use in 6.4 ~ 7.2
GHz band amplifiers.The hermetically sealed metal-
ceramic package guarantees high reliability.
Parameter
Test conditions
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal injury, fire
or property damage. Remember to give due consideration to
safety when making your circuit designs, with appropriate
measures such as (1)placement of substitutive, auxiliary
circuits, (2)use of non-flammable material or (3)prevention
against any malfunction or mishap.
Symbol
Unit
12.0
21.0 +/-0.3
10.7
(1)
17.0 +/-0.2
4.5
+/-0.4
0.2
GF-8
1.6
2MIN
(2)
12.9
+/-0.2
2MIN
OUTLINE DRAWING
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
0.1
2.6
+/-0.2
R-1.6
(3)
(2)
11.3
0.6 +/-0.15
Unit : millimeters
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| MGFC39V7177-51 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC39V7177A-01 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC39V7177A-51 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC39V7785A-01 | X BAND, GaAs, N-CHANNEL, RF POWER, JFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGFC39V6472A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:6.4 ~ 7.2GHz BAND 8W INTERNALLY MATCHED GaAs FET |
| MGFC39V6472A_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
| MGFC39V7177A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
| MGFC39V7177A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7.1 ~ 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET |
| MGFC39V7177A_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
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