型號(hào): | MGFC39V5258-51 |
元件分類: | 功率晶體管 |
英文描述: | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
封裝: | HERMETIC SEALED, METAL CERAMIC PACKAGE-2 |
文件頁數(shù): | 8/9頁 |
文件大?。?/td> | 362K |
代理商: | MGFC39V5258-51 |
相關(guān)PDF資料 |
PDF描述 |
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MGFC39V5258 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
MGFC39V5867 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
MGFC39V6471-51 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
MGFC39V6472A-01 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
MGFC39V6472A-51 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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MGFC39V5864 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
MGFC39V5867 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.8~6.75GHz BAND 8W INTERNALLY MATCHED GaAs FET |
MGFC39V5867_12 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
MGFC39V5964 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET |
MGFC39V5964A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |